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PDF BUK9516-55A Data sheet ( Hoja de datos )
| Número de pieza | BUK9516-55A | |
| Descripción | TrenchMOS stransistor Logic level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK9516-55A
N-channel TrenchMOS logic level FET
Rev. 02 — 21 April 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
1.3 Applications
Automotive and general purpose
power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source avalanche
energy
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C
VGS = 10 V; ID = 25 A;
Tj = 25 °C
VGS = 5 V; ID = 25 A;
Tj = 25 °C
ID = 49 A; Vsup ≤ 25 V;
RGS = 50 Ω; VGS = 5 V;
Tj(init) = 25 °C; unclamped
Min Typ Max Unit
- - 55 V
- - 66 A
- - 138 W
- 10 15 mΩ
- 12.5 16 mΩ
- - 120 mJ
1 page  
NXP Semiconductors
BUK9516-55A
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
VGS(th)
gate-source threshold voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
LD
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
LS internal source inductance
Source-drain diode
VSD source-drain voltage
trr reverse recovery time
Qr recovered charge
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = -55 °C
VDS = 55 V; VGS = 0 V; Tj = 25 °C
VDS = 55 V; VGS = 0 V; Tj = 175 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 175 °C
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 25 °C
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C
VDS = 30 V; RL = 1.2 Ω; VGS = 5 V;
RG(ext) = 10 Ω; Tj = 25 °C
measured from contact screw on tab
to centre of die ; Tj = 25 °C
measured from drain lead 6 mm from
package to centre of die ; Tj = 25 °C
from source lead to source bond pad ;
Tj = 25 °C
IS = 25 A; VGS = 0 V; Tj = 25 °C
IS = 66 A; VGS = 0 V; Tj = 25 °C
IS = 20 A; dIS/dt = -100 A/µs;
VGS = -10 V; VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
55 - - V
50 - - V
0.5 - - V
1 1.5 2 V
- - 2.3 V
- 0.05 10 µA
- - 500 µA
- 2 100 nA
- 2 100 nA
- - 17 mΩ
- - 32 mΩ
- 10 15 mΩ
-
12.5 16
mΩ
- 2314 3085 pF
- 347 416 pF
- 243 333 pF
- 45 68 ns
- 130 195 ns
- 400 560 ns
- 130 182 ns
- 3.5 - nH
- 4.5 - nH
- 7.5 - nH
- 0.85 1.2 V
- 1.1 - V
- 51 164 ns
- 102 126 nC
BUK9516-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
BUK9516-55A
N-channel TrenchMOS logic level FET
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BUK9516-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
11 of 12
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