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BUK7613-60E Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer BUK7613-60E
Beschreibung N-channel TrenchMOS standard level FET
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 12 Seiten
BUK7613-60E Datasheet, Funktion
BUK7613-60E
N-channel TrenchMOS standard level FET
13 July 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1V at 175 °C
1.3 Applications
12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 15 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics
QGD
gate-drain charge
ID = 15 A; VDS = 48 V; VGS = 10 V;
Fig. 13; Fig. 14
Min Typ Max Unit
- - 60 V
- - 58 A
- - 96 W
-
9.44 13
- 6.9 - nC
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BUK7613-60E Datasheet, Funktion
NXP Semiconductors
BUK7613-60E
N-channel TrenchMOS standard level FET
Symbol
Parameter
Conditions
Source-drain diode
VSD source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C; Fig. 16
trr reverse recovery time IS = 15 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 25 V
120
VGS(V) = 10
ID
(A)
80
003aah454
8
6
30
RDSon
(mΩ)
20
Min Typ Max Unit
- 0.84 1.2 V
- 21.3 - ns
- 18.1 - nC
003aah455
5.5
40 10
5
4.5
0
0 1 2 VDS(V) 3
0
0 5 10 15 VGS(V) 20
Fig. 6.
Tj = 25 °C; tp = 300 μs
Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
120
ID
(A)
80
003aah457
5
VGS(th)
(V)
4
3
003aah027
max
typ
Tj = 175 °C
40
Tj = 25 °C
2 min
1
0
0 2 4 6 VGS(V) 8
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
0
-60 0 60 120 180
Tj (°C)
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
BUK7613-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 July 2012
© NXP B.V. 2012. All rights reserved
6 / 12

6 Page









BUK7613-60E pdf, datenblatt
NXP Semiconductors
9. Contents
1 Product profile ....................................................... 1
1.1 General description .............................................. 1
1.2 Features and benefits ...........................................1
1.3 Applications .......................................................... 1
1.4 Quick reference data ............................................ 1
2 Pinning information ............................................... 2
3 Ordering information ............................................. 2
4 Limiting values .......................................................2
5 Thermal characteristics .........................................4
6 Characteristics ....................................................... 5
7 Package outline ..................................................... 9
8 Legal information .................................................10
8.1 Data sheet status ............................................... 10
8.2 Definitions ...........................................................10
8.3 Disclaimers .........................................................10
8.4 Trademarks ........................................................ 11
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 13 July 2012
BUK7613-60E
N-channel TrenchMOS standard level FET
BUK7613-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 July 2012
© NXP B.V. 2012. All rights reserved
12 / 12

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