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BUK7610-55AL Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer BUK7610-55AL
Beschreibung N-channel TrenchMOS standard level FET
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 13 Seiten
BUK7610-55AL Datasheet, Funktion
BUK7610-55AL
N-channel TrenchMOS standard level FET
Rev. 02 — 9 January 2008
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized
for linear operation. This product has been designed and qualified to the appropriate AEC
standard for use in automotive critical applications.
1.2 Features
„ 175 °C rated
„ Stable operation in linear mode
„ Q101 compliant
„ TrenchMOS technology
1.3 Applications
„ 12 V and 24 V loads
„ DC linear motor control
„ Automotive systems
„ Repetitive clamped inductive switching
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
ID drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 4 and 1
Ptot total power dissipation Tmb = 25 °C; see Figure 2
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
ID = 75 A; Vsup 55 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
inductive load
Static characteristics
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 12 and
13
[1] Continuous current is limited by package.
Min Typ Max Unit
[1] - - 75 A
- - 300 W
- - 1.1 J
- 8.5 10 mΩ






BUK7610-55AL Datasheet, Funktion
NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 16
trr reverse recovery time
Qr recovered charge
Dynamic characteristics
IS = 20 A; dIS/dt = -100 A/μs;
VGS = 0 V; VDS = 30 V; Tj = 25 °C
IS = 20 A; dIS/dt = -100 A/μs;
VGS = 0 V; VDS = 30 V; Tj = 25 °C
QG(tot)
total gate charge
ID = 25 A; VDS = 44 V;
VGS = 10 V; Tj = 25 °C;
see Figure 14
QGS gate-source charge ID = 25 A; VDS = 44 V;
VGS = 10 V; Tj = 25 °C;
see Figure 14
QGD
gate-drain charge
ID = 25 A; VDS = 44 V;
VGS = 10 V; Tj = 25 °C;
see Figure 14
VGS(pl)
gate-source plateau ID = 25 A; VDS = 44 V; Tj = 25 °C;
voltage
see Figure 14
Ciss
input capacitance
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Tj = 25 °C;
see Figure 15
Coss
output capacitance
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Tj = 25 °C;
see Figure 15
Crss
reverse transfer
VGS = 0 V; VDS = 25 V;
capacitance
f = 1 MHz; Tj = 25 °C;
see Figure 15
td(on)
tr
td(off)
tf
LD
LS
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
VDS = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG(ext) = 10 Ω;
Tj = 25 °C
VDS = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG(ext) = 10 Ω;
Tj = 25 °C
VDS = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG(ext) = 10 Ω;
Tj = 25 °C
VDS = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG(ext) = 10 Ω;
Tj = 25 °C
from upper edge of drain
mounting base to center of die;
Tj = 25 °C
from source lead to source bond
pad; Tj = 25 °C
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max Unit
0.85 1.2
73 -
430 -
V
ns
nC
124 -
nC
22 -
nC
50 -
nC
5
4710
-
6280
V
pF
980
1180
pF
560 770 pF
33 -
ns
117 -
ns
132 -
ns
95 -
ns
2.5 -
nH
7.5 -
nH
BUK7610-55AL_2
Product data sheet
Rev. 02 — 9 January 2008
© NXP B.V. 2008. All rights reserved.
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BUK7610-55AL pdf, datenblatt
NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
9. Legal information
9.1 Data sheet status
Document status[1][2]
Objective [short] data sheet
Preliminary [short] data sheet
Product [short] data sheet
Product status[3]
Development
Qualification
Production
Definition
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
10. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
BUK7610-55AL_2
Product data sheet
Rev. 02 — 9 January 2008
© NXP B.V. 2008. All rights reserved.
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