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Teilenummer | BUK768R3-60E |
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Beschreibung | N-channel TrenchMOS standard level FET | |
Hersteller | NXP Semiconductors | |
Logo | ||
Gesamt 12 Seiten BUK768R3-60E
N-channel TrenchMOS standard level FET
13 July 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
• AEC Q101 compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True standard level gate with VGS(th) rating of greater than 1V at 175 °C
1.3 Applications
• 12 V Automotive systems
• Motors, lamps and solenoid control
• Start-Stop micro-hybrid applications
• Transmission control
• Ultra high performance power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 20 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics
QGD
gate-drain charge
ID = 20 A; VDS = 48 V; VGS = 10 V;
Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 60 V
[1] - - 75 A
- - 137 W
- 5.9 8.3 mΩ
- 14.6 - nC
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NXP Semiconductors
BUK768R3-60E
N-channel TrenchMOS standard level FET
Symbol
Parameter
Conditions
Source-drain diode
VSD source-drain voltage IS = 20 A; VGS = 0 V; Tj = 25 °C; Fig. 16
trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 25 V
180
ID
(A)
VGS(V) = 10
120
8
003aah754
6
5.5
15
RDSon
(mΩ)
10
Min Typ Max Unit
- 0.84 1.2 V
- 27 - ns
- 24 - nC
003aah755
60 5
5
4.5
0
0 1 2 VDS(V) 3
0
0 5 10 15 VGS(V) 20
Fig. 6.
Tj = 25 °C; tp = 300 μs
Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
240
ID
(A)
160
003aah757
5
VGS(th)
(V)
4
3
003aah027
max
typ
Tj = 175 °C
80
Tj = 25 °C
2 min
1
0
0 2 4 6 VGS(V) 8
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
0
-60 0 60 120 180
Tj (°C)
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
BUK768R3-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 July 2012
© NXP B.V. 2012. All rights reserved
6 / 12
6 Page NXP Semiconductors
9. Contents
1 Product profile ....................................................... 1
1.1 General description .............................................. 1
1.2 Features and benefits ...........................................1
1.3 Applications .......................................................... 1
1.4 Quick reference data ............................................ 1
2 Pinning information ............................................... 2
3 Ordering information ............................................. 2
4 Limiting values .......................................................2
5 Thermal characteristics .........................................4
6 Characteristics ....................................................... 5
7 Package outline ..................................................... 9
8 Legal information .................................................10
8.1 Data sheet status ............................................... 10
8.2 Definitions ...........................................................10
8.3 Disclaimers .........................................................10
8.4 Trademarks ........................................................ 11
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 13 July 2012
BUK768R3-60E
N-channel TrenchMOS standard level FET
BUK768R3-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 July 2012
© NXP B.V. 2012. All rights reserved
12 / 12
12 Page | ||
Seiten | Gesamt 12 Seiten | |
PDF Download | [ BUK768R3-60E Schematic.PDF ] |
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