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Número de pieza | BUK7608-55A | |
Descripción | N-channel TrenchMOS standard level FET | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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N-channel TrenchMOS standard level FET
Rev. 03 — 14 June 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot total power dissipation Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 175 °C; see Figure 11;
see Figure 12
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 11;
see Figure 12
Min Typ Max Unit
- - 55 V
[1] - - 75 A
- - 254 W
- - 16 mΩ
- 6.8 8 mΩ
1 page NXP Semiconductors
BUK7608-55A
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction see Figure 4
to mounting base
thermal resistance from junction mounted on printed-circuit
to ambient
board ; minimum footprint
Min Typ Max Unit
- - 0.59 K/W
- 50 - K/W
1 03nh49
Zth(j-mb)
(K/W)
δ = 0.5
10−1
0.2
0.1
0.05
10−2
0.02
Single Shot
10−3
10−6
10−5
10−4
10−3
P
tp
δ=
T
10−2
tp
T
t
10−1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7608-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 14 June 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page NXP Semiconductors
BUK7608-55A
N-channel TrenchMOS standard level FET
8. Revision history
Table 7. Revision history
Document ID
Release date Data sheet status
Change notice
Supersedes
BUK7608-55A v.3
Modifications:
20100614
Product data sheet
-
BUK7508_7608_55A v.2
• The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number BUK7608-55A separated from data sheet BUK7508_7608_55A v.2.
BUK7508_7608_55A v.2 20020117
Product specification
-
-
BUK7608-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 14 June 2010
© NXP B.V. 2010. All rights reserved.
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Número de pieza | Descripción | Fabricantes |
BUK7608-55 | TrenchMOS transistor Standard level FET | NXP Semiconductors |
BUK7608-55 | TrenchMOS transistor Standard level FET | NXP Semiconductors |
BUK7608-55A | N-channel TrenchMOS standard level FET | NXP Semiconductors |
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