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What is BUK9608-55B?

This electronic component, produced by the manufacturer "NXP Semiconductors", performs the same function as "N-channel TrenchMOS logic level FET".


BUK9608-55B Datasheet PDF - NXP Semiconductors

Part Number BUK9608-55B
Description N-channel TrenchMOS logic level FET
Manufacturers NXP Semiconductors 
Logo NXP Semiconductors Logo 


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BUK9608-55B
N-channel TrenchMOS logic level FET
Rev. 04 — 4 May 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Suitable for logic level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V and 24 V loads
„ Automotive systems
„ General purpose power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj 25 °C; Tj 175 °C
voltage
ID
drain current
VGS = 5 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C
VGS = 5 V; ID = 25 A;
Tj = 25 °C; see Figure 11;
see Figure 12
Min Typ Max Unit
- - 55 V
[1] - - 75 A
- - 203 W
- 6.2 7 m
- 7.1 8.4 m

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BUK9608-55B equivalent
NXP Semiconductors
BUK9608-55B
N-channel TrenchMOS logic level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
see Figure 4
minimum footprint; mounted on a PCB
Min Typ Max Unit
- - 0.74 K/W
- 50 - K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
101
0.1
0.05
0.02
03nn56
102
single shot
P δ = tp
T
103
106
105
104
103
102
tp
T
t
101
tp (s)
1
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration
BUK9608-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 4 May 2010
© NXP B.V. 2010. All rights reserved.
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