Datenblatt-pdf.com


BUK7Y25-60E Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer BUK7Y25-60E
Beschreibung N-channel 60V 25m ohm standard level MOSFET
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 13 Seiten
BUK7Y25-60E Datasheet, Funktion
BUK7Y25-60E
N-channel 60 V, 25 mΩ standard level MOSFET in LFPAK56
7 May 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 10 A; Tj = 25 °C;
resistance
Fig. 11
Dynamic characteristics
QGD
gate-drain charge
ID = 10 A; VDS = 48 V; VGS = 10 V;
Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit
- - 60 V
- - 34 A
- - 64 W
-
15.7 25
- 5.6 - nC
Scan or click this QR code to view the latest information for this product






BUK7Y25-60E Datasheet, Funktion
NXP Semiconductors
BUK7Y25-60E
N-channel 60 V, 25 mΩ standard level MOSFET in LFPAK56
Symbol
Parameter
Conditions
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 15
Crss reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 45 V; RL = 4 Ω; VGS = 10 V;
RG(ext) = 5 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 16
trr reverse recovery time IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 25 V; Tj = 25 °C
Min Typ Max Unit
- 784 1043 pF
- 123 148 pF
- 82 112 pF
- 5.3 - ns
- 6 - ns
- 11.2 - ns
- 6.4 - ns
- 0.84 1.2 V
- 17.3 - ns
- 14.6 - nC
100
ID
(A)
80
60
40
003aai509
10 V
7V
6.5 V
6V
VGS = 5.5 V
100
RDSon
80
60
40
003aai510
Fig. 6.
20
0
0 0.5 1 1.5 2
Tj = 25 °C; tp = 300 μs
5V
4.5 V
4V
2.5 3 3.5
VDS (V)
4
Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7.
20
0
0 4 8 12 16 20
VGS (V)
Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK7Y25-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 May 2013
© NXP B.V. 2013. All rights reserved
6 / 13

6 Page









BUK7Y25-60E pdf, datenblatt
NXP Semiconductors
BUK7Y25-60E
N-channel 60 V, 25 mΩ standard level MOSFET in LFPAK56
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
BUK7Y25-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 May 2013
© NXP B.V. 2013. All rights reserved
12 / 13

12 Page





SeitenGesamt 13 Seiten
PDF Download[ BUK7Y25-60E Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
BUK7Y25-60EN-channel 60V 25m ohm standard level MOSFETNXP Semiconductors
NXP Semiconductors

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche