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Número de pieza | PMZ760SN | |
Descripción | N-channel TrenchMOS standard level FET | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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PMZ760SN
N-channel TrenchMOS standard level FET
Rev. 02 — 12 July 2007
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
I Profile 55 % lower than SOT23
I Low on-state resistance
I Leadless package
I Footprint 90 % smaller than SOT23
I Fast switching
I Standard level compatible threshold
1.3 Applications
I Driver circuits
I Load switching in portable appliances
1.4 Quick reference data
I VDS ≤ 60 V
I RDSon ≤ 900 mΩ
I ID ≤ 1.22 A
I Ptot ≤ 2.50 W
2. Pinning information
Table 1.
Pin
1
2
3
Pinning
Description
gate (G)
source (S)
drain (D)
Simplified outline
1
3
2
Transparent
top view
SOT883 (SC-101)
Symbol
D
G
mbb076 S
1 page NXP Semiconductors
PMZ760SN
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Static characteristics
V(BR)DSS drain-source breakdown
voltage
VGS(th) gate-source threshold voltage
IDSS drain leakage current
IGSS
RDSon
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot) total gate charge
QGS gate-source charge
QGD
gate-drain charge
VGS(pl) gate-source plateau voltage
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain voltage
Conditions
ID = 10 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 0.25 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
VDS = 60 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 0.3 A; see Figure 6 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 4.5 V; ID = 0.075 A; see Figure 6 and 8
ID = 1 A; VDS = 30 V; VGS = 10 V;
see Figure 11 and 12
VGS = 0 V; VDS = 30 V; f = 1 MHz;
see Figure 14
VDS = 30 V; RL = 15 Ω; VGS = 10 V; RG = 6 Ω
IS = 0.3 A; VGS = 0 V; see Figure 13
Min Typ Max Unit
60 - - V
55 - - V
12
0.6 -
--
3V
-V
3.5 V
- - 1 µA
- - 100 µA
- 10 100 nA
- 760 900 mΩ
- 1400 1665 mΩ
- 1100 1600 mΩ
- 1.05 - nC
- 0.2 - nC
- 0.22 - nC
- 4- V
- 23 - pF
- 4.8 - pF
- 3.4 - pF
- 2 - ns
- 4 - ns
- 5 - ns
- 2.2 - ns
- 0.83 1.2 V
PMZ760SN_2
Product data sheet
Rev. 02 — 12 July 2007
© NXP B.V. 2007. All rights reserved.
5 of 13
5 Page NXP Semiconductors
PMZ760SN
N-channel TrenchMOS standard level FET
9. Revision history
Table 6. Revision history
Document ID
Release date Data sheet status
Change notice Supersedes
PMZ760SN _2
Modifications:
20070712
Product data sheet
-
PMZ760SN_01
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Numerous updates and corrections have been made throughout the data sheet, and all tbd
sections have been replaced, including Figure 3, Figure 4, Figure 5, Figure 6, and
Figure 12.
PMZ760SN_01
(9397 750 11143)
20030224
Objective data sheet
-
-
PMZ760SN_2
Product data sheet
Rev. 02 — 12 July 2007
© NXP B.V. 2007. All rights reserved.
11 of 13
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet PMZ760SN.PDF ] |
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