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PDF NX3020NAKS Data sheet ( Hoja de datos )
| Número de pieza | NX3020NAKS | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
11 November 2013
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363
(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
• Very fast switching
• Trench MOSFET technology
• ESD protection
• Low threshold voltage
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
Per transistor
VDS drain-source voltage Tj = 25 °C
- - 30 V
VGS gate-source voltage
-20 -
20 V
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
[1] - - 180 mA
Static characteristics (per transistor)
RDSon
drain-source on-state VGS = 10 V; ID = 100 mA; Tj = 25 °C
resistance
- 2.7 4.5 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
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1 page  
NXP Semiconductors
NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
102 0.2
0.25
0.1
0.05
0.02
0 0.01
017aaa674
10
10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 017aaa675
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
102 0.2
0.25
0.1
0.05
0.02
0 0.01
10
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 1 cm2
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NX3020NAKS
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 November 2013
© NXP N.V. 2013. All rights reserved
5 / 15
5 Page 
NXP Semiconductors
NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
13. Soldering
2.65
2.35 1.5 0.6 0.5
(4×) (4×)
0.4 (2×)
0.5 0.6
(4×) (2×)
0.6
(4×)
1.8
Fig. 19. Reflow soldering footprint for TSSOP6 (SOT363)
1.5
4.5 0.3 2.5
1.5
1.3 1.3
2.45
5.3
Fig. 20. Wave soldering footprint for TSSOP6 (SOT363)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot363_fr
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot363_fw
NX3020NAKS
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 November 2013
© NXP N.V. 2013. All rights reserved
11 / 15
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| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet NX3020NAKS.PDF ] | |
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