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PDF PMN35EN Data sheet ( Hoja de datos )
| Número de pieza | PMN35EN | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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PMN35EN
30 V, 5.1 A N-channel Trench MOSFET
Rev. 1 — 20 July 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 5.1 A; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-20 -
20 V
[1] - - 5.1 A
- 25 31 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
D drain
D drain
G gate
S source
D drain
D drain
Simplified outline
654
123
SOT457 (TSOP6)
Graphic symbol
D
G
mbb076 S
1 page  
NXP Semiconductors
PMN35EN
30 V, 5.1 A N-channel Trench MOSFET
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGSth
gate-source threshold
voltage
IDSS drain leakage current
IGSS gate leakage current
RDSon
drain-source on-state
resistance
gfs forward
transconductance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain voltage
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VDS = VGS; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 150 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 5.1 A; Tj = 25 °C
VGS = 10 V; ID = 5.1 A; Tj = 150 °C
VGS = 4.5 V; ID = 4.3 A; Tj = 25 °C
VDS = 10 V; ID = 5.1 A; Tj = 25 °C
VDS = 15 V; ID = 5.1 A; VGS = 10 V;
Tj = 25 °C
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = 15 V; VGS = 10 V; RG(ext) = 6 Ω;
Tj = 25 °C; ID = 5.1 A
IS = 1.3 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
30 - - V
1 1.5 2.5 V
- - 1 µA
- - 10 µA
- - 100 nA
- - 100 nA
- 25 31 mΩ
- 39 48 mΩ
- 32 43 mΩ
- 14 - S
- 6.2 9.3 nC
- 0.9 - nC
- 1 - nC
- 334 - pF
- 81 - pF
- 40 - pF
- 4 - ns
- 15 - ns
- 53 - ns
- 24 - ns
- 0.75 1.2 V
PMN35EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 July 2011
© NXP B.V. 2011. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
10. Soldering
3.45
1.95
PMN35EN
30 V, 5.1 A N-channel Trench MOSFET
0.95
3.3 2.825
0.95
0.45 0.55
(6×) (6×)
0.7
(6×)
0.8
(6×)
2.4
Fig 19. Reflow soldering footprint for SOT457 (TSOP6)
5.3
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot457_fr
1.475
5.05
1.475
1.5
(4×)
0.45
(2×)
1.45
(6×)
2.85
Fig 20. Wave soldering footprint for SOT457 (TSOP6)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot457_fw
PMN35EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 July 2011
© NXP B.V. 2011. All rights reserved.
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