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PDF NX3008PBKW Data sheet ( Hoja de datos )
| Número de pieza | NX3008PBKW | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
Rev. 1 — 1 August 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; ID = -200 mA;
Tj = 25 °C
Min Typ Max Unit
- - -30 V
-8 - 8 V
[1] - - -200 mA
- 2.8 4.1 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
1 page  
NXP Semiconductors
NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
Conditions
in free air
Rth(j-sp)
thermal resistance from junction to solder point
Min Typ Max Unit
[1] - 415 480 K/W
[2] - 350 400 K/W
- - 150 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.25 0.2
0.1 0.05
10
0
0.02
0.01
017aaa028
1
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1 0.05
017aaa029
0 0.02
10 0.01
1
10−3
10−2
10−1
FR4 PCB, mounting pad for drain 1 cm2
1
10 102 103
tp (s)
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NX3008PBKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 August 2011
© NXP B.V. 2011. All rights reserved.
5 of 16
5 Page 
NXP Semiconductors
9. Package outline
Plastic surface-mounted package; 3 leads
DB
NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
SOT323
E AX
y
3
1
e1 bp
e
2
wM B
HE v M A
A
A1
Q
Lp
detail X
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
max
bp
c
D
E
e
e1 HE Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25 2.2
0.10 1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45 0.23
0.15 0.13
0.2
0.2
OUTLINE
VERSION
SOT323
IEC
REFERENCES
JEDEC
JEITA
SC-70
Fig 18. Package outline SOT323 (SC-70)
NX3008PBKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 August 2011
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
© NXP B.V. 2011. All rights reserved.
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