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PDF PMZ350XN Data sheet ( Hoja de datos )
| Número de pieza | PMZ350XN | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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PMZ350XN
N-channel TrenchMOS standard level FET
Rev. 01 — 21 February 2008
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
I Profile 55 % lower than SOT23
I Low on-state resistance
I Leadless package
I Footprint 90 % smaller than SOT23
I Low threshold voltage
I fast switching
1.3 Applications
I Driver circuits
I DC-to-DC converters
I Load switching in portable appliances
1.4 Quick reference data
I VDS ≤ 30 V
I RDSon ≤ 420 mΩ
I ID ≤ 1.87 A
I Ptot ≤ 2.50 W
2. Pinning information
Table 1. Pinning
Pin Description
1 gate (G)
2 source (S)
3 drain (D)
Simplified outline
1
3
2
Transparent
top view
SOT833 (SC-101)
Symbol
D
G
mbb076 S
1 page  
NXP Semiconductors
PMZ350XN
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Static characteristics
V(BR)DSS drain-source breakdown
voltage
VGS(th) gate-source threshold voltage
IDSS drain leakage current
IGSS
RDSon
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot) total gate charge
QGS gate-source charge
QGD
gate-drain charge
VGS(pl) gate-source plateau voltage
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain voltage
Conditions
ID = 10 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 0.25 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
VDS = 30 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±8 V; VDS = 0 V
VGS = 4.5 V; ID = 0.2 A; see Figure 6 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 2.5 V; ID = 0.1 A; see Figure 6 and 8
ID = 1 A; VDS = 15 V; VGS = 4.5 V;
see Figure 11 and 12
-
VGS = 0 V; VDS = 25 V; f = 1 MHz;
see Figure 14
VDS = 15 V; RL = 15 Ω; VGS = 4.5 V; RG = 6 Ω
IS = 0.3 A; VGS = 0 V; see Figure 13
Min Typ Max Unit
30 - - V
27 - - V
0.5 1
0.35 -
--
1.5 V
-V
1.8 V
- - 1 µA
- - 100 µA
- 10 100 nA
- 350 420 mΩ
- 595 714 mΩ
- 520 650 mΩ
- 0.65 - nC
- 0.14 - nC
- 0.18 - nC
- 2.45 - V
- 37 - pF
- 8.6 - pF
- 5.4 - pF
- 6.5 - ns
- 9.5 - ns
- 14 - ns
- 5.5 - ns
- 0.78 1.2 V
PMZ350XN_1
Product data sheet
Rev. 01 — 21 February 2008
© NXP B.V. 2008. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
9. Revision history
Table 6. Revision history
Document ID
Release date
PMZ350XN_1
20080221
PMZ350XN
N-channel TrenchMOS standard level FET
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PMZ350XN_1
Product data sheet
Rev. 01 — 21 February 2008
© NXP B.V. 2008. All rights reserved.
11 of 13
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| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet PMZ350XN.PDF ] | |
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