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PDF LTC5599IUF Data sheet ( Hoja de datos )
| Número de pieza | LTC5599IUF | |
| Descripción | 30MHz to 1300MHz Low Power Direct Quadrature Modulator | |
| Fabricantes | Linear Technology | |
| Logotipo |  |
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LTC5599
Features
30MHz to 1300MHz
Low Power
Direct Quadrature Modulator
Description
n Frequency Range: 30MHz to 1300MHz
n Low Power: 2.7V to 3.6V Supply; 28mA
n Low LO Carrier Leakage: –51.5dBm at 500MHz
n Side-Band Suppression: –52.6dBc at 500MHz
n Output IP3: 20.8dBm at 500MHz
n Low RF Output Noise Floor: –156dBm/Hz at 6MHz
Offset, PRF = 3dBm
n Sine Wave or Square Wave LO Drive
n SPI Control:
Adjustable Gain: –19dB to 0dB in 1dB Steps
Effecting Supply Current from 8mA to 35mA
I/Q Offset Adjust: –65dBm LO Carrier Leakage
I/Q Gain/Phase Adjust: –60dBc Side-Band Suppressed
n 24-Lead QFN 4mm × 4mm Package
Applications
n Wireless Microphones
n Battery Powered Radios
n Ad-Hoc Wireless Infrastructure Networks
n “White-Space” Transmitters
n Software Defined Radios (SDR)
n Military Radios
The LTC®5599 is a direct conversion I/Q modulator de-
signed for low power wireless applications that enable
direct modulation of differential baseband I and Q signals
on an RF carrier. Single side-band modulation or side-band
suppressed upconversion can be achieved by applying
90° phase-shifted signals to the I and Q inputs. The I/Q
baseband input ports can be either AC or DC coupled to a
source with a common mode voltage level of about 1.4V.
The SPI interface controls the supply current, modulator
gain, and allows optimization of the LO carrier feedthrough
and side-band suppression, with sine wave or square
wave LO drive. A fixed LC network on the LO and RF ports
covers a continuous 90MHz to 1300MHz operation. An
on-chip thermometer can be activated to compensate for
gain-temperature variations. More accurate temperature
measurements can be made using an on-chip diode. In
addition, a continuous analog gain control (VCTRL) pin
can be used for fast power control.
L, LT, LTC, LTM, Linear Technology, and the Linear logo are registered trademarks and
QuikEval is a trademark of Linear Technology Corporation. All other trademarks are the property
of their respective owners.
Typical Application
90MHz to 1300MHz Direct Conversion Transmitter Application
VCTRL
SPI
3.3V
1nF + 4.7µF
VCC LTC5599
I-DAC
EN
VI
0°
90°
I-CHANNEL
RF = 90MHz
to 1300MHz
10nF
PA
Q-DAC
BASEBAND
GENERATOR
VCO/SYNTHESIZER
VI
39nH
15pF
Q-CHANNEL
THERMOMETER
TTCK
5599 TA01a
For more information www.linear.com/LTC5599
EVM and Noise Floor vs RF Output
Power and Digital Gain Setting
with 1Ms/s 16-QAM Signal
10
9
8
DG = –19
DG = –16
DG = –12
7 DG = –8
6
5
DG = –4
DG = 0
4
3
2
1
0
–105
–115
–125
–135
–145
–155
–15 –10
–5
0
–165
5
RF OUTPUT POWER (dBm)
5599 TA01b
5599f
1
1 page  
LTC5599
E lectrical Characteristics The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TC = 25°C. VCC = 3.3V, EN = 3.3V, VCTRL = 3.3V, PLO = 0dBm, BBPI, BBMI, BBPQ,
BshBiMfteQd,colomwmeornsimdeobdaenDd Csevloelctatigoen,VaClMl BrBeg=is1te.4rsVDsCe,t
I and Q baseband
to default values,
input signal = 2MHz, 2.1MHz,
unless otherwise noted. Test
c1iVrcPu-Pit(DiIsFFs,hIoowr nQ),inI
and Q
Figure
90°
13.
SYMBOL
tCSS
tCSH
tCS
tCH
tDO
tC%
fCLK
VTEMP
PARAMETER
CSB Setup Time
CSB High Time
SDI to SCLK Setup Time
SDI to SCLK Hold Time
SCLK to SDO Time
SCLK Duty Cycle
Maximum SCLK Frequency
Temperature Diode Voltage
Temperature Slope
CONDITIONS
ITEMP = 100µA
ITEMP = 100µA
MIN
l 20
l 30
l 20
l 10
l 45
l 45
l 20
TYP MAX UNITS
ns
ns
ns
ns
ns
50 55
%
MHz
763 mV
1.6 mV/°C
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC5599 is guaranteed functional over the operating case
temperature range from –40°C to 105°C.
Note 3: At 6MHz offset from the LO signal frequency. 100nF between BBPI
and BBMI, 100nF between BBPQ and BBMQ.
Note 4: The Default Register Settings are listed in Table 1.
Note 5: IM2 is measured at fLO – 4.1MHz.
Note 6: IM3 is measured at fLO – 2.2MHz and fLO – 1.9MHz. OIP3 = lowest
of (1.5 • P{fLO – 2.1MHz} – 0.5 • P{fLO – 2.2MHz}) and (1.5 • P{fLO – 2MHz}
– 0.5 • P{fLO – 1.9MHz}).
Note 7: Without side-band or LO feedthrough nulling (unadjusted).
Note 8: RF power is within 10% of final value.
Note 9: RF power is at least 30dB down from its ON state.
Note 10: VOL voltage scales linear with current sink. For example for
RPULL-UP = 1kΩ, VCC_L = 3.3V the SDO sink current is about (3.3 – 0.2)
/1kΩ = 3.1mA. Max VOL = 0.7 • 3.1/8 = 0.271V, with RPULL-UP the SDO
pull-up resistor and VCC_L the digital supply voltage to which RPULL-UP is
connected to.
Note 11: I and Q baseband Input signal = 2MHz CW, 0.8VP-P, DIFF each,
I and Q 0° shifted.
Note 12: fLO = 500MHz, PLO = 0dBm, C4 = 1.5nF
Note 13: Maximum VOH is derated for capacitive load using the following
formula: VCC_L • exp (–0.5 • TCLK/(RPULL-UP • CLOAD), with TCLK the
time of one SCLK cycle, RPULL-UP the SDO pull-up resistor, VCC_L the
digital supply voltage to which RPULL-UP is connected to, and CLOAD the
capacitive load at the SDO pin. For example for TCLK = 100ns (10MHz
SCLK), RPULL-UP = 1kΩ, CLOAD = 10pF and VCC_L = 3.3V the derating is 3.3
• exp(–5) = 22.2mV, thus maximum VOH = 3.3V – 0.1 – 0.0222 = 3.177V.
Note 14: Minimum VCC in order to retain register data content.
Note 15: Guaranteed by design and characterization. This parameter is not
tested.
Note 16: RF pin guaranteed by design while using a 10nF coupling
capacitor. The RF pin is not tested.
For more information www.linear.com/LTC5599
5599f
5
5 Page 
LTC5599
T ypical Performance Characteristics VCC = 3.3V, EN = 3.3V, VCTRL = 3.3V, TC = 25°C,
P2.L1OM=H0zd,B1mVP,-fPL(ODI=FF5,0I0oMr QH)z,,
BBPI, BBMI, BBPQ, BBMQ common mode DC
I and Q 90° shifted, lower sideband selection,
vToElMtaPgUePVDCTMB=B0=,
1re.4gVisDteC,r
I and
0x00
Q baseband input signal
value according to Table
= 2MHz,
5, all
other registers set to default values, unless otherwise noted. Test circuit is shown in Figure 13.
LO Leakage vs LO Power at
fLO = 1260MHz
–44
–48 DIGITAL GAIN = –4
–52
–56
–60 DIGITAL
–64 GAIN = –10
–68
–72
–76
–80
–10 –8
3.3V
3.6V
2.7V
–6 –4 –2 0 2
LO POWER (dBm)
85°C
105°C
–10°C
–40°C
46
5599 G46
Side-Band Suppression vs
LO Power at fLO = 150MHz
–40
DIGITAL GAIN = –4 (SOLID)
DIGITAL GAIN = –10 (DASHED)
–45 3.3V
3.6V
2.7V
–50
85°C
105°C
–10°C
–40°C
–55
–60
–65
–10 –8
–6 –4 –2 0 2
LO POWER (dBm)
46
5599 G47
Side-Band Suppression vs
LO Power at fLO = 500MHz
–40
DIGITAL GAIN = –4 (SOLID)
DIGITAL GAIN = –10 (DASHED)
–45
–50
–55
–60
–65
–10
85°C
105°C
–10°C
–40°C
3.3V
3.6V
2.7V
–8 –6 –4 –2 0
LO POWER (dBm)
2
46
5599 G48
Side-Band Suppression vs
LO Power at fLO = 900MHz
–40
DIGITAL GAIN = –4 (SOLID)
DIGITAL GAIN = –10 (DASHED)
–45
–50
–55
–60
–65
–10
85°C
105°C
–10°C
–40°C
3.3V
3.6V
2.7V
–8 –6 –4 –2 0
LO POWER (dBm)
2
46
5599 G49
Side-Band Suppression vs
LO Power at fLO = 1260MHz
–40
–41
–42
–43
–44
–45
–46
DIGITAL GAIN = –4 (SOLID)
DIGITAL GAIN = –10 (DASHED)
–47
–48
–49
–50
–10
85°C
105°C
–10°C
–40°C
–8 –6
3.3V
3.6V
2.7V
–4 –2
0
LO POWER (dBm)
2
46
5599 G50
Supply Current vs VCTRL Voltage
40
30
20
2.7V, 25°C
3.3V, 25°C
3.6V, 25°C
10 3.3V, 85°C
3.3V, –40°C
3.3V, –10°C
AGCTRL = 1
3.3V, 105°C
0
0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 3.3
VCTRL VOLTAGE (V)
5599 G51
VCTRL Current vs VCTRL Voltage
3.0
2.5
2.7V, 25°C
2.0
3.3V, 25°C
3.6V, 25°C
3.3V, 85°C
3.3V, –40°C
3.3V, –10°C
1.5 3.3V, 105°C
0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 3.3
VCTRL (V)
5599 G52
Gain vs VCTRL Voltage
0
AGCTRL = 1
–20
–40
2.7V, 25°C
3.3V, 25°C
–60
3.6V, 25°C
3.3V, 85°C
3.3V, –40°C
3.3V, –10°C
–80 3.3V, 105°C
0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 3.3
VCTRL VOLTAGE (V)
5599 G53
For more information www.linear.com/LTC5599
Output IP3 vs VCTRL Gain
25 AGCTRL = 1
20
15
10
5
0
–5
–10
–27
2.7V, 25°C
3.3V, 25°C
3.6V, 25°C
3.3V, 85°C
3.3V, –40°C
3.3V, –10°C
3.3V, 105°C
–23 –19 –15 –11
–7
GAIN SET BY VCTRL (dB)
5599 G54
5599f
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet LTC5599IUF.PDF ] | |
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