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PDF SKM200GAL123D Data sheet ( Hoja de datos )
| Número de pieza | SKM200GAL123D | |
| Descripción | IGBT Modules | |
| Fabricantes | Semikron International | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SKM200GAL123D (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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SKM 200GB123D
SEMITRANS® 3
IGBT Modules
SKM 200GB123D
SKM 200GAL123D
SKM 200GAR123D
Features
!
" #
$ % &
'
#
( ) # *+
&
"
,*- , *
-
.
/0
12
Typical Applications*
+*
34
GB
GAL
GAR
Absolute Maximum Ratings
Symbol Conditions
IGBT
*8
&*
.9 5 16 7*
.9 5 /62 7*
&*<
&*<51%&*
=8
** 5 $22 ? =8 @ 12 ?
*8 A /122
Inverse Diode
&( .9 5 /62 7*
&(<
&(<51%&(
&(
5 /2 ? C
Freewheeling Diode
&( .9 5 /62 7*
&(<
&(
Module
&
<
.9
.
&(<51%&(
5 /2 ? C
+* / C
. 5 16 7*
#
Values
Units
. 5 16 7*
. 5 ;6 7*
.9 5 /16 7*
/122
122
/;2
022
> 12
/2
+
+
+
B
. 5 16 7*
. 5 ;2 7*
.9 5 /62 7*
. 5 16 7*
. 5 ;2 7*
.9 5 /62 7*
122
/02
022
/DD2
1$2
/;2
D22
/;22
622
' D2 CCC E /62
/16
' D2CCCE /16
1622
+
+
+
+
+
+
+
+
+
7*
7*
Characteristics
. 5 16 7*
#
Symbol Conditions
min. typ. max. Units
IGBT
=8
=8 5 *8 &* 5 $ +
D6 66 $6
&*8
*82
*8
=8 5 2 *8 5 *8
=8 5 /6
.9 5 16 7*
.9 5 16 7*
.9 5 /16 7*
.9 5 167*
.9 5 /167*
2/ 20 +
/D /$
/$ /;
F00 G00 H
/2 /1$$ H
*8
*
*
*
&* 5 /62 + =8 5 /6 .9 5 7*
C
*8 5 16 =8 5 2
# 5 / !I
16 0
/2 /0 (
/6 1 (
2; /1 (
J= =8 5 '; ' E12
/622
*
<=
8
##
#
8##
.9 5 7*
<= 5 6$ H
<=## 5 6$ H
** 5 $22
&*5 /62+
.9 5 /16 7*
=8 5 '/6
16 K
112 D22
/22 122
1D L
$22 ;22
F2 /22
/F L
<
9'
&=-.
22G MNO
1
13-01-2009 NOS
© by SEMIKRON
1 page  
SKM 200GB123D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
13-01-2009 NOS
© by SEMIKRON
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SKM200GAL123D.PDF ] | |
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