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PDF SSE07N80SL Data sheet ( Hoja de datos )
| Número de pieza | SSE07N80SL | |
| Descripción | N-Ch Enhancement Mode Power MOSFET | |
| Fabricantes | SeCoS Halbleitertechnologie | |
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Elektronische Bauelemente
SSE07N80SL
7A , 800V , RDS(ON) 1.6Ω
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSE07N80SL is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent RDS(on) and gate charge for most of the synchronous
buck converter applications .
TO-220P
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
1
Gate
2
Drain
3
Source
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
9.3 10.6
14.2 16.5
2.7 BSC.
12.6 14.7
1.0 1.8
0.4 1.0
3.6 4.8
REF.
H
I
J
K
L
M
Millimeter
Min. Max.
2.54 BCS.
1.8 2.9
2.6 3.95
0.3 0.6
5.8 7.0
1.2 1.45
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS 800
Gate-Source Voltage
VGS ±30
Continuous Drain Current
TC=25°C
TC=100°C
ID
7
4.4
Pulsed Drain Current
IDM 28
Total Power Dissipation
Single Pulse Avalanche Energy 1
TC=25°C
Derate above 25°C
PD
EAS
154
1.23
534
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient RθJA 62.5
Maximum Thermal Resistance Junction-Case
Notes:
1. L=30mH,IAS=5.5A, VDD=135V, RG=20Ω, Starting TJ =25°C
RθJC
0.81
Unit
V
V
A
A
A
W
mJ
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
15-Oct-2013 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 5
1 page  
Elektronische Bauelemente
TYPICAL TEST CURVES
SSE07N80SL
7A , 800V , RDS(ON) 1.6Ω
N-Ch Enhancement Mode Power MOSFET
http://www.SeCoSGmbH.com/
15-Oct-2013 Rev. A
Any changes of specification will not be informed individually.
Page 5 of 5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SSE07N80SL.PDF ] | |
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