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IRF320 Schematic ( PDF Datasheet ) - Harris

Teilenummer IRF320
Beschreibung N-Channel Power MOSFETs
Hersteller Harris
Logo Harris Logo 




Gesamt 7 Seiten
IRF320 Datasheet, Funktion
Semiconductor
July 1998
IRF320, IRF321,
IRF322, IRF323
2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm,
N-Channel Power MOSFETs
Features
• 2.8A and 3.3A, 350V and 400V
• rDS(ON) = 1.8and 2.5
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF320
TO-204AA
IRF320
IRF321
TO-204AA
IRF321
IRF322
TO-204AA
IRF322
IRF323
TO-204AA
IRF323
NOTE: When ordering, use the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17404.
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 1569.3






IRF320 Datasheet, Funktion
IRF320, IRF321, IRF322, IRF323
Typical Performance Curves Unless Otherwise Specified (Continued)
5
PULSE DURATION = 80µs
4
3
2
25oC
150oC
1
0
0 123 45
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
100
PULSE DURATION = 80µs
10
TJ = 150oC
1
TJ = 25oC
0.1
0
0.4 0.8 1.2 1.6
VSD , SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
2.0
20
ID = 3.3A
16
12
VDS = 320V
VDS = 200V
VDS = 80V
8
4
0
0 4 8 12 16 20
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5-6

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