(PDF) SPN2324 Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	SPN2324
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	SYNC POWER
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No Preview Available ! SPN2324 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2324 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN2324 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  Powered System  DC/DC Converter  Load Switch FEATURES  100V/1A,RDS(ON)= 310mΩ@VGS= 10V  High density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-23 package design PIN CONFIGURATION(SOT-23) 2013/07/04 Ver.3 PART MARKING 24YW YW: Date Code Page 1 1 page SPN2324 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage Normalized Thermal Transient Impedance, Junction to Foot 2013/07/04 Ver.3 Page 5 5 Page

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PDF SPN2324 Data sheet ( Hoja de datos )