(PDF) SPN1024S56RGB Datasheet - Dual N-Channel Enhancement Mode MOSFET

Número de pieza	SPN1024S56RGB
Descripción	Dual N-Channel Enhancement Mode MOSFET
Fabricantes	SYNC POWER
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No Preview Available ! SPN1024 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1024 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES N-Channel 20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-563 (SC-89-6L) package design PIN CONFIGURATION( SOT-563 / SC-89-6L) PART MARKING 2010/05/25 Ver.2 Page 1 1 page SPN1024 Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2010/05/25 Ver.2 Page 5 5 Page

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PDF SPN1024S56RGB Data sheet ( Hoja de datos )