(PDF) SPN4402BS8RGB Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	SPN4402BS8RGB
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	SYNC POWER
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No Preview Available ! SPN4402B N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4402B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES 30V/12A,RDS(ON)= 15mΩ@VGS= 10V 30V/10A,RDS(ON)= 18mΩ@VGS= 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design APPLICATIONS z Power Management in Note book z Battery Powered System z DC/DC Converter z Load Switch z LCD Display inverter PIN CONFIGURATION(SOP – 8P) PART MARKING 2009/12/ 15 Ver.1 Page 1 1 page SPN4402B N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/12/ 15 Ver.1 Page 5 5 Page

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PDF SPN4402BS8RGB Data sheet ( Hoja de datos )