(PDF) SPN8205WTS8RGB Datasheet - Common-Drain Dual N-Channel Enhancement Mode MOSFET

Número de pieza	SPN8205WTS8RGB
Descripción	Common-Drain Dual N-Channel Enhancement Mode MOSFET
Fabricantes	SYNC POWER
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No Preview Available ! SPN8205W Common-Drain Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8205W is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES 20V/5.0A,RDS(ON)= 24mΩ@VGS= 4.5V 20V/3.0A,RDS(ON)= 34mΩ@VGS= 2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSSOP – 8P package design APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter PIN CONFIGURATION(TSSOP – 8P) PART MARKING 2010/03/12 Ver.1 Page 1 1 page SPN8205W Common-Drain Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2010/03/12 Ver.1 Page 5 5 Page

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PDF SPN8205WTS8RGB Data sheet ( Hoja de datos )