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APM2050ND Schematic ( PDF Datasheet ) - Anpec Electronics Coropration

Teilenummer APM2050ND
Beschreibung N-Channel Enhancement Mode MOSFET
Hersteller Anpec Electronics Coropration
Logo Anpec Electronics Coropration Logo 




Gesamt 10 Seiten
APM2050ND Datasheet, Funktion
APM2050ND
N-Channel Enhancement Mode MOSFET
Features
20V/5A,
RDS(ON)=25m(Typ.) @ VGS=10V
RDS(ON)=30m(Typ.) @ VGS=4.5V
RDS(ON)=50m(Typ.) @ VGS=2.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Applications
DC/DC Converters
Pin Description
G
D
S
Top View of SOT-89
(2)
D
(1) G
S
(3)
N-Channel MOSFET
Ordering and Marking Information
APM2050N
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
D : SOT-89
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
L : Lead Free Device
G : Halogen and Lead Free Device
APM2050N D :
APM2050
XXXXX_N
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. A.2 - Sep., 2008
1
www.anpec.com.tw






APM2050ND Datasheet, Funktion
APM2050ND
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
2.0
V = 10V
GS
1.8 I = 5A
DS
1.6
1.4
1.2
1.0
0.8
0.6
0.4
R @T =25oC:
ON j
25m
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Source-Drain Diode Forward
20
10
T =150oC
j
T =25oC
1j
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD - Source - Drain Voltage (V)
Capacitance
700
Frequency=1MHz
600
500
400
Ciss
300
200
Crss
100
Coss
0
0 4 8 12 16 20
V - Drain-Source Voltage (V)
DS
Gate Charge
10
V =10V
DS
9 I = 5A
D
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12
Q - Gate Charge (nC)
G
Copyright © ANPEC Electronics Corp.
Rev. A.2 - Sep., 2008
6
www.anpec.com.tw

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