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PDF APM2050NU Data sheet ( Hoja de datos )

Número de pieza APM2050NU
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes Anpec Electronics Coropration 
Logotipo Anpec Electronics Coropration Logotipo



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No Preview Available ! APM2050NU Hoja de datos, Descripción, Manual

APM2050NU
N-Channel Enhancement Mode MOSFET
Features
20V/18A,
RDS(ON)=25m(typ.) @ VGS=10V
RDS(ON)=30m(typ.) @ VGS=4.5V
RDS(ON)=50m(typ.) @ VGS=2.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Applications
Power Management in Desktop Computer or
DC/DC Converters
Pin Description
GD
S
Top View of TO-252
D
G
S
N-Channel MOSFET
Ordering and Marking Information
APM2050N
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150° C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM2050N U :
APM2050N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL
classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. B.1 - May, 2006
1
www.anpec.com.tw

1 page




APM2050NU pdf
APM2050NU
Typical Characteristics (Cont.)
Output Characteristics
40
V = 4,5,6,7,8,9,10V
GS
35
3.5V
30
25
3V
20
15 2.5V
10
2V
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
80
70 V =2.5V
GS
60
50
40
V =4.5V
GS
30
V =10V
GS
20
10
0
0 5 10 15 20 25 30 35 40
ID - Drain Current (A)
Drain-Source On Resistance
70
I =7A
D
60
50
40
30
20
10
1 2 3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
I
DS
=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © ANPEC Electronics Corp.
Rev. B.1 - May, 2006
5
www.anpec.com.tw

5 Page










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