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Teilenummer | ELM5964-10F |
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Beschreibung | C-Band Internally Matched FET | |
Hersteller | SUMITOMO | |
Logo | ||
Gesamt 5 Seiten ELM5964-10F
C-Band Internally Matched FET
FEATURES
・High Output Power: P1dB=40.5dBm(Typ.)
・High Gain: G1dB=10.0dB(Typ.)
・High PAE: hadd=39%(Typ.)
・Broad Band: 5.9~6.4GHz
・Impedance Matched Zin/Zout = 50W
・Hermetically Sealed Package
DESCRIPTION
The ELM5964-10F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50W system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 oC)
Ite m
Symbol
Rating
Drain-Source Voltage
VDS
15
Gate-Source Voltage
V GS
-5
Total Pow er Dissipation
PT
42.8
Storage Tem perature
Tstg
-55 to +125
Channel Tem perature
Tch
175
Unit
V
V
W
oC
oC
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 oC)
Ite m
Sym bol
Condition
Lim it
DC Input Voltage
Forw ard Gate Current
Reverse Gate Current
VDS
IGF RG=50 ohm
IGR RG=50 ohm
≦10
≦27.0
≧-5.8
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 oC)
Ite m
Sym bol
Condition
Lim it
Min. Typ. Max.
Unit
Drain Current
IDSS VDS=5V , VGS=0V
- 4.0 5.6
A
Trans conductance
gm VDS=5V , IDS=2.4A
- 4.0 -
S
Pinch-off Voltage
Vp VDS=5V , IDS=240mA
-0.5 -1.5 -3.0
V
Gate-Source Breakdow n Voltage
VGSO IGS=-240uA
-5.0 -
-
V
Output Pow er at 1dB G.C.P.
Pow er Gain at 1dB G.C.P.
Drain Current
Pow er-added Efficiency
Gain Flatness
3rd Order Interm odulation
Dis tor t ion
P1dB
G1dB
Idsr
Nadd
DG
IM3
VDS=10V
f= 5.9 ~ 6.4 GHz
IDSDC=2.6A (typ.)
Zs=ZL=50 ohm
f=6.4 GHz
Df=10MHz,2-tone Test
Pout=29dBm (S.C.L.)
39.5 40.5
9.0 10.0
- 2.6
- 39
--
-44 -46
-
-
3.0
-
1.2
-
dBm
dB
A
%
dB
dBc
Therm al Resistance
Rth Channel to Case
- 3.0 3.5
oC/W
Channel Tem perature Rise
DTch
10V x Idsr X Rth
- - 100
oC
CASE STYLE : IK
S.C.L. : Single Carrier Level G.C.P.: Gain Com pression Point
ESD Class IIIA 4000 ~ 8000V
Note : Based on JEDEC JESD22-A114 (C=100pF, R=1500 W)
Edition 1.4
July 2009
1
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ ELM5964-10F Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
ELM5964-10F | C-Band Internally Matched FET | SUMITOMO |
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