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Número de pieza | WNM2023 | |
Descripción | N-Channel MOSFET | |
Fabricantes | TY Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de WNM2023 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! VDS (V)
20
Rds(on) (Ω)
0.038@ VGS=4.5V
0.044@ VGS=2.5V
0.052@ VGS=1.8V
Descriptions
The WNM2023 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNM2023 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23-3L
Applications
Product specification
WNM2023
Single N-Channel, 20V, 3.2A, Power MOSFET
SOT-23-3L
D
3
12
GS
Pin configuration (Top view)
3
W04*
12
W04= Device Code
* = Month (A~Z)
Marking
Order information
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Device
Package
Shipping
WNM2023-3/TR SOT-23-3L 3000/Reel&Tape
http://www.twtysemi.com
1 of 3
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet WNM2023.PDF ] |
Número de pieza | Descripción | Fabricantes |
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WNM2023 | N-Channel MOSFET | TY Semiconductor |
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