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Número de pieza | FODM8801B | |
Descripción | High-Temperature Phototransistor Optocoupler | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FODM8801B (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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FODM8801A, FODM8801B, FODM8801C
OptoHiT™ Series, High-Temperature Phototransistor
Optocoupler in Half-Pitch Mini-Flat 4-Pin Package
Features
■ Utilizing Proprietary Process Technology to Achieve
High Operating Temperature: up to 125°C
■ Guaranteed Current Transfer Ratio (CTR)
Specifications Across Full Temperature Range
– Excellent CTR Linearity at High-Temperature
– CTR at Very Low Input Current, IF
■ High Isolation Voltage Regulated by Safety Agency:
C-UL / UL1577, 3750 VACRMS for 1 minute and
DIN EN/IEC60747-5-5
■ Compact Half-Pitch, Mini-Flat, 4-Pin Package
(1.27 mm Lead Pitch, 2.4 mm Maximum Standoff
Height)
■ > 5mm Creepage and Clearance Distance
■ Applicable to Infrared Ray Reflow, 245°C
Applications
■ Primarily Suited for DC-DC Converters
■ Ground-Loop Isolation, Signal-Noise Isolation
■ Communications – Adapters, Chargers
■ Consumer – Appliances, Set-Top Boxes
■ Industrial – Power Supplies, Motor Control,
Programmable Logic Control
Description
In the OptoHiT™ series, the FODM8801 is a first-of-kind
phototransistor, utilizing Fairchild’s leading-edge
proprietary process technology to achieve high operating
temperature characteristics, up to 125°C. The opto-
coupler consists of an aluminum gallium arsenide
(AlGaAs) infrared light-emitting diode (LED) optically
coupled to a phototransistor, available in a compact half-
pitch, mini-flat, 4-pin package. It delivers high current
transfer ratio at very low input current. The input-output
isolation voltage, VISO, is rated at 3750 VACRMS.
Schematic
Package
ANODE 1
4 COLLECTOR
CATHODE 2
3 EMITTER
Figure 1. Schematic
Figure 2. Half-Pitch Mini-Flat
©2010 Fairchild Semiconductor Corporation
FODM8801X Rev. 1.1.2
www.fairchildsemi.com
1 page Transfer Characteristics
Apply over all recommended conditions (TA = -40°C to +125°C unless otherwise specified).
All typical values are measured at TA = 25°C.
Symbol
Parameter
Device
Conditions
Min.
CTRCE
Current Transfer FODM8801A
Ratio
(Collector-Emitter)
FODM8801B
FODM8801C
CTRCE(SAT) Saturated Current FODM8801A
Transfer Ratio
(Collector-Emitter)
FODM8801B
FODM8801C
VCE(SAT) Saturation Voltage FODM8801A
FODM8801B
FODM8801C
IF = 1.0 mA, VCE = 5 V
@ TA = 25°C
IF = 1.0 mA, VCE = 5 V
IF = 1.6 mA, VCE = 5 V
IF = 3.0 mA, VCE = 5 V
IF = 1.0 mA, VCE = 5 V
@ TA = 25°C
IF = 1.0 mA, VCE = 5 V
IF = 1.6 mA, VCE = 5 V
IF = 3.0 mA, VCE = 5 V
IF = 1.0 mA, VCE = 5 V
@ TA = 25°C
IF = 1.0 mA, VCE = 5 V
IF = 1.6 mA, VCE = 5 V
IF = 3.0 mA, VCE = 5 V
IF = 1.0 mA, VCE = 0.4 V
@ TA = 25°C
IF = 1.0 mA, VCE = 0.4 V
IF = 1.6 mA, VCE = 0.4 V
IF = 3.0 mA, VCE = 0.4 V
IF = 1.0 mA, VCE = 0.4 V
@ TA = 25°C
IF = 1.0 mA, VCE = 0.4 V
IF = 1.6 mA, VCE = 0.4 V
IF = 3.0 mA, VCE = 0.4 V
IF = 1.0 mA, VCE = 0.4 V
@ TA = 25°C
IF = 1.0 mA, VCE = 0.4 V
IF = 1.6 mA, VCE = 0.4 V
IF = 3.0 mA, VCE = 0.4 V
IF = 1.0 mA, IC = 0.3 mA
IF = 1.6 mA, IC = 0.4 mA
IF = 3.0 mA, IC = 0.6 mA
IF = 1.0 mA, IC = 0.45 mA
IF = 1.6 mA, IC = 0.6 mA
IF = 3.0 mA, IC = 1.0 mA
IF = 1.0 mA, IC = 0.75 mA
IF = 1.6 mA, IC = 1.0 mA
IF = 3.0 mA, IC = 1.6 mA
80
35
40
45
130
65
70
75
200
100
110
115
65
30
25
20
90
45
40
35
140
75
65
55
Typ. Max. Units
120 160 %
120 230
125
138
195 260
%
%
%
%
195 360
202
215
300 400
%
%
%
%
300 560
312
330
108 150
%
%
%
%
108
104
92
168 245
%
%
%
%
168
155
132
238 380
%
%
%
%
238
215
177
0.17 0.40
0.16 0.40
0.15 0.40
0.17 0.40
0.16 0.40
0.16 0.40
0.18 0.40
0.17 0.40
0.17 0.40
%
%
%
V
V
V
V
V
V
V
V
V
©2010 Fairchild Semiconductor Corporation
FODM8801X Rev. 1.1.2
5
www.fairchildsemi.com
5 Page Ordering Information
Part Number
FODM8801A
FODM8801B
FODM8801C
FODM8801x
FODM8801x R2
FODM8801x V
FODM8801x R2V
Current Transfer Ratio (CTR %) Option, IF = 1 mA, VCE = 5 V
80% to 160%
130% to 260%
200% to 400%
Packing Method
Tube (100 units per tube)
Tape and Reel (2500 units per reel)
Tube (100 units per tube), DIN/EN IEC60747-5-5
Tape and Reel (2500 units per reel), DIN/EN IEC60747-5-5
All packages are lead free per JEDEC: J-STD-020B standard.
“x ” denotes the Current Transfer Ratio option. For example, FODM8801A R2 is a phototransistor with
80% to 160% CTR in tape and reel packaging.
Marking Information
1
8801x
V X YY M
3 45
2
6
Definitions
1 Fairchild logo
2 Device number, ‘x’ denotes CTR% option (A, B, or C)
3 VDE mark (Note: Only appears on parts ordered with
DIN/EN IEC60747-5-5 option – See order entry table)
4 One-digit year code, e.g., ‘1’ represents the year 2011
5 Two-digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
©2010 Fairchild Semiconductor Corporation
FODM8801X Rev. 1.1.2
11
www.fairchildsemi.com
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet FODM8801B.PDF ] |
Número de pieza | Descripción | Fabricantes |
FODM8801A | High-Temperature Phototransistor Optocoupler | Fairchild Semiconductor |
FODM8801B | High-Temperature Phototransistor Optocoupler | Fairchild Semiconductor |
FODM8801C | High-Temperature Phototransistor Optocoupler | Fairchild Semiconductor |
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