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GP07N120 Schematic ( PDF Datasheet ) - Infineon

Teilenummer GP07N120
Beschreibung SGP07N120
Hersteller Infineon
Logo Infineon Logo 




Gesamt 11 Seiten
GP07N120 Datasheet, Funktion
SGP07
N120
Fast IGBT in NPT-technology
lower Eoff compared to previous generation
Short circuit withstand time – 10 µs
Designed for:
- Motor controls
- Inverter
- SMPS
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
PG-TO-220-3-1
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SGP07N120 1200
VCE
V
IC
8A
Eoff
0.7mJ
Tj M
150°C
arking Package
GP07N120 PG-TO-220-3-1
G
C
E
Maximum Ratings
Parameter S
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 8A, VCC = 50V, RGE = 25, start at Tj = 25°C
Short circuit withstand time2
VGE = 15V, 100V VCC 1200V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
ymbol
VCE
IC
ICpuls
-
V GE
EAS
tSC
Ptot
T j , T stg
-
Value
1200
16.5
7.9
27
27
±20
40
10
125 W
-55...+150
260
Unit
V
A
V
mJ
µs
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.3 Sep 07
http://www.Datasheet4U.com






GP07N120 Datasheet, Funktion
SGP07
N120
td(off)
100ns
tf
td(on)
tr
10ns
0A 5A 10A 15A 20A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 4 7 ,
dynamic test circuit in Fig.E )
100ns
td(off)
td(on)
tf
tr
10ns
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 8A, RG = 4 7,
dynamic test circuit in Fig.E )
000ns
td(off)
100ns
td(on)
tf
tr
10ns
0
20406080100
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 8A,
dynamic test circuit in Fig.E )
6V
5V
4V max.
3V typ.
2V min.
1V
0V
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.3mA)
Power Semiconductors
6
Rev. 2.3 Sep 07

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