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Teilenummer | GP07N120 |
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Beschreibung | SGP07N120 | |
Hersteller | Infineon | |
Logo | ||
Gesamt 11 Seiten SGP07
N120
Fast IGBT in NPT-technology
• lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
PG-TO-220-3-1
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SGP07N120 1200
VCE
V
IC
8A
Eoff
0.7mJ
Tj M
150°C
arking Package
GP07N120 PG-TO-220-3-1
G
C
E
Maximum Ratings
Parameter S
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 8A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C
Short circuit withstand time2
VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
ymbol
VCE
IC
ICpuls
-
V GE
EAS
tSC
Ptot
T j , T stg
-
Value
1200
16.5
7.9
27
27
±20
40
10
125 W
-55...+150
260
Unit
V
A
V
mJ
µs
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.3 Sep 07
http://www.Datasheet4U.com
SGP07
N120
td(off)
100ns
tf
td(on)
tr
10ns
0A 5A 10A 15A 20A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 4 7 Ω,
dynamic test circuit in Fig.E )
100ns
td(off)
td(on)
tf
tr
10ns
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 8A, RG = 4 7Ω,
dynamic test circuit in Fig.E )
000ns
td(off)
100ns
td(on)
tf
tr
10ns
0Ω
20Ω 40Ω 60Ω 80Ω 100Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 8A,
dynamic test circuit in Fig.E )
6V
5V
4V max.
3V typ.
2V min.
1V
0V
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.3mA)
Power Semiconductors
6
Rev. 2.3 Sep 07
6 Page | ||
Seiten | Gesamt 11 Seiten | |
PDF Download | [ GP07N120 Schematic.PDF ] |
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