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PDF ME08N20 Data sheet ( Hoja de datos )

Número de pieza ME08N20
Descripción N-Channel 200V (D-S) MOSFET
Fabricantes Matsuki 
Logotipo Matsuki Logotipo



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No Preview Available ! ME08N20 Hoja de datos, Descripción, Manual

N- Channel 200V (D-S) MOSFET
ME08N20/ME08N20-G
GENERAL DESCRIPTION
The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower
field effect transistors ar e pr oduced using high cel l de nsity DMOS
trench technology. This high density process is especi ally tailored to
minimize on-state resist ance. These dev ices are p articularly su ited
for lo w volt age appl ication su ch as LCD i nverter, compute r po wer
management and DC to DC converter circu its which need low in-line
power loss.
FEATURES
RDS(ON)≦0.4@VGS=10V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Po wer Management
DC/DC Converter
LCD TV & Monitor Display inverter
CCFL inverter
Secon dary Synchronous Rectification
PIN CONFIGURA TION
(TO-252-3L)
Top View
e Ordering Information: ME08N20 (Pb-free)
ME08N20-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25Unless Otherwise Noted)
Parameter Sy
mbol
Drain-Source Voltage
VDS 200
Gate-Source Voltage
VGS ±20
Continuous Drain Current *
TC=25
TC=70
ID
Pulsed Drain Current
IDM 36
Maximum Power Dissipation
TC=25
TC=70
PD
Operating Junction Temperature
TJ
Thermal Resistance-Junction to Case*
RθJC 1.67
* Notes: The device mounted on 1in2 FR4 board with 2 oz copper
Maximum Ratings
9
7.2
74.9
47.9
-55 to 150
Unit
V
V
A
A
W
/W
Nov, 2012-Ver1.6
http://www.Datasheet4U.com
01

1 page




ME08N20 pdf
N- Channel 200V (D-S) MOSFET
ME08N20/ME08N20-G
TO-252-3L Package Outline
SYMBOL
A
B
C
D
D1
E
E1
L1
L2
L3
H
P
MIN
2.10
0.40
0.40
5.30
2.20
6.30
4.80
0.90
0.50
0.00
8.90
2.30 BSC
MAX
2.50
0.90
0.90
6.30
2.90
6.75
5.50
1.80
1.10
0.20
10.40
Nov, 2012-Ver1.6
05

5 Page










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