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PDF STF8NM60ND Data sheet ( Hoja de datos )
| Número de pieza | STF8NM60ND | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | STMicroelectronics | |
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STD8NM60ND, STF8NM60ND
STP8NM60ND, STU8NM60ND
N-channel 600 V, 0.59 Ω , 7 A, FDmesh™ II Power MOSFET
TO-220, TO-220FP, IPAK, DPAK
Features
Type
VDSS
(@Tjmax)
RDS(on)
max
ID
STD8NM60ND
STF8NM60ND
STP8NM60ND
STU8NM60ND
650 V
650 V
650 V
650 V
< 0.70 Ω
< 0.70 Ω
< 0.70 Ω
< 0.70 Ω
7A
7A
7 A(1)
7A
1. Limited only by maximum temperature allowed
■ The worldwide best RDS(on)* area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
Application
■ Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.Strongly recommended for
bridge topologies, in ZVS phase-shift converters.
Table 1. Device summary
Order codes
Marking
STD8NM60ND
STF8NM60ND
STP8NM60ND
STU8NM60ND
8NM60ND
8NM60ND
8NM60ND
8NM60ND
3
2
1
TO-220
3
1
DPAK
3
2
1
IPAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Package
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
Tube
February 2009
Rev 1
1/17
www.st.com
17
http://www.Datasheet4U.com
1 page  
STx8NM60ND
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300 V, ID = 7 A,
RG = 4.7 Ω, VGS = 10 V
Figure 18,
Figure 23
Min.
Typ. Max. Unit
9 ns
22 ns
37 ns
22 ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM (1)
VSD(2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A, VGS = 0
ISD = 7 A, di/dt = 100
A/µs, VDD = 30 V,
Figure 20
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A,
di/dt = 100 A/µs,
VDD = 30 V, Tj=150°C
Figure 20
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min.
Typ.
120
0.49
8
Max. Unit
7A
28 A
1.3 V
ns
µC
A
170 ns
0.75 µC
9A
5/17
5 Page 
STx8NM60ND
Package mechanical data
Dim
A
b
b1
c0
D
D1
E
e
e1
F1
H1
J1
L1
L1
L20
L302
∅P
Q2
TO-220 mechanical data
Min
4.40
0.61
1.14
.48
15.25
10
2.40
4.95
.23
6.20
2.40
3
3.50
3.75
.65
mm
Typ
1.27
16.40
8.90
Max
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
Min
0.173
0.024
0.044
0.019
0.6
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
inch
Typ
0.050
0.645
1.137
Max
0.181
0.034
0.066
0.027
0.62
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.151
0.116
11/17
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet STF8NM60ND.PDF ] | |
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