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PDF HBN2515S6R Data sheet ( Hoja de datos )
| Número de pieza | HBN2515S6R | |
| Descripción | Low Vcesat NPN Epitaxial Planar Transistor | |
| Fabricantes | CYStech Electronics | |
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CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
HBN2515S6R
(Dual Transistors)
Spec. No. : C223S6-A
Issued Date : 2007.07.18
Revised Date :2011.02.22
Page No. : 1/6
Features
• Two BTD2515 chips in a SOT-363 package.
• Mounting possible with SOT-323 automatic mounting machines.
• Transistor elements are independent, eliminating interference.
• Mounting cost and area can be cut in half.
• Low VCE(sat), VCE(sat)=25mV (max), at IC / IB = 10mA / 0.5mA.
• Weight : 9.1mg, approximately.
• Pb-free package.
Equivalent Circuit
HBN2515S6R
Outline
SOT-363
Tr1 Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj
Tstg
Limits
20
15
6
800
1.5 (Note 1)
200 (total) (Note 2)
150
-55~+150
Unit
V
V
V
mA
A
mW
°C
°C
Note : 1.Single pulse, Pw=10ms
2.150mW per element must not be exceeded.
HBN2515S6R
CYStek Product Specification
http://www.Datasheet4U.com
1 page  
CYStech Electronics Corp.
Spec. No. : C223S6-A
Issued Date : 2007.07.18
Revised Date :2011.02.22
Page No. : 5/6
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
HBN2515S6R
CYStek Product Specification
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HBN2515S6R.PDF ] | |
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