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K2099-01L Schematic ( PDF Datasheet ) - Fuji Electric

Teilenummer K2099-01L
Beschreibung MOSFET ( Transistor ) - 2SK2099-01L
Hersteller Fuji Electric
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Gesamt 2 Seiten
K2099-01L Datasheet, Funktion
2SK2099-01L,S
FAP-IIA Series
> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Avalanche Proof
> Outline Drawing
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
N-channel MOS-FET
250V 0,85Ω 6A 20W
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
Drain-Gate-Voltage (RGS=20K)
Continous Drain Current
V DS
V DGR
ID
250
250
6
Pulsed Drain Current
I D(puls)
24
Gate-Source-Voltage
V GS
±30
Max. Power Dissipation
P D 20
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
> Equivalent Circuit
Unit
V
V
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=250V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=3A
VGS=10V
Forward Transconductance
g fs ID=3A VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=150V
t r ID=6A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
t f RGS=10
Avalanche Capability
I AV L = 100µH Tch=25°C
Continous Reverse Drain Current
I DR
Pulsed Reverse Drain Current
I DRM
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr IF=IDR VGS=0V
Reverse Recovery Charge
Q rr -dIF/dt=100A/µs Tch=25°C
Min.
250
2,5
1,5
6
Typ. Max.
3,0 3,5
10 500
0,2 1,0
10 100
0,6 0,85
3,0
400 600
75 110
20 30
20 30
20 30
40 60
10 15
6
24
1,0 1,5
120
0,6
Unit
V
V
µA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
A
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
°C/W
6,25 °C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
http://www.Datasheet4U.com





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