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IRF13N50 Schematic ( PDF Datasheet ) - Nell

Teilenummer IRF13N50
Beschreibung N-Channel Power MOSFET / Transistor
Hersteller Nell
Logo Nell Logo 




Gesamt 7 Seiten
IRF13N50 Datasheet, Funktion
SEMICONDUCTOR
IRF13N50 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(14A, 500Volts)
DESCRIPTION
The Nell IRF13N50 are N-channel enhancement mode
silicon gate power field effect transistors.
They are designed, tested and guaranteed to withstand
level of energy in breakdown avalanche made of operation.
They are designed as an extremely efficient and reliable
device for use in a wide variety of applications such as
SMPS, UPS, convertors, motor drivers and drivers for high
power bipolar switching transistors requiring high speed
and low gate drive power.
These transistors can be operated directly from
integrated circuits.
D
GDS
TO-220AB
(IRF13N50A)
D (Drain)
FEATURES
RDS(ON) = 0.45Ω @ VGS = 10V
Ultra low gate charge(81nC max.)
Low reverse transfer capacitance
(CRSS = 11pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
G
(Gate)
S (Source)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
14
500
0.45 @ VGS = 10V
81
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
VDGR
VGS
ID
IDM
Drain to Source voltage(Note 1)
Drain to Gate voltage
Gate to Source voltage
Continuous Drain Current
Pulsed Drain current (Note 1)
TJ=25°C to 150°C
RGS=20KΩ
VGS=10V, TC=25°C
VGS=10V, TC=100°C
IAR
EAR
EAS
dv/dt
Repetitive avalanche current (Note 1)
Repetitive avalanche energy(Note 1)
Single pulse avalanche energy (Note 2)
Peak diode recovery dv/dt(Note 3)
IAR=14A, RGS=50Ω, VGS=10V
IAS=14A, L=5.7mH
PD Total power dissipation
Derating factor above 25°C
TC=25°C
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.VDD=50V, L=5.7mH, IAS=14A, RG=25Ω, dV/dt=7.6 V/ns, starting TJ=25˚C
3.ISD 14A, di/dt ≤ 250A/µs, VDD V(BR)DSS, TJ ≤ 150°C.
www.nellsemi.com
Page 1 of 7
VALUE
500
500
±30
14
9.1
56
14
25
560
9.2
250
1.9
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
mJ
V /ns
W
W /°C
ºC
lbf.in (N.m)
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IRF13N50 Datasheet, Funktion
SEMICONDUCTOR
IRF13N50 Series RRooHHSS
Nell High Power Products
Fig.12c. Maximum avalanche energy vs.
Drain current
1150
920
lD
TOP
6.3A
8.9A
BOTTOM 14A
690
460
230
0
25 50 75 100 125 150
Starting Junction temperature, TJ (°C)
Fig.13a. Basic gate charge waveform
VGS
10V
QGS
QG
QGD
Charge
Fig.13b. Gate charge test circuit
Current Regulator
Same Type as D.U.T.
50KΩ
12V 0.2µF
0.3µF
VGS
3mA
D.U.T.
+
- VDS
RG RD
Current Sampling Resistors
Fig.14 Peak diode recovery dv/dt test circuit for N-Channel MOSFET
D.U.T.
+ Circuit Layout Considerations
• Low Stray lnductance
• Ground Plane
• Low Leakage lnductance
Current Transformer
-
+
- -+
RG
dv/dt controlled by RG
Driver same type as D.U.T.
+
lSD controlled by Duty Factor "D" - VDD
D.U.T. -Device Under Test
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
*VGS=10V
D.U.T. I SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
VDD
ISD
*VGS = 5V for Logic Level Devices and 3V for drive devices
www.nellsemi.com
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