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EF10C01E3 Schematic ( PDF Datasheet ) - CYStech Electronics

Teilenummer EF10C01E3
Beschreibung 10Amp. Glass Passivated Efficient Fast Recovery Rectifiers
Hersteller CYStech Electronics
Logo CYStech Electronics Logo 




Gesamt 3 Seiten
EF10C01E3 Datasheet, Funktion
CYStech Electronics Corp.
Spec. No. : C749E3
Issued Date : 2006.07.26
Revised Date :
Page No. : 1/3
10Amp. Glass Passivated Efficient Fast Recovery Rectifiers
EF10CXXE3 Series
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Mechanical Data
Case: Molded plastic, TO-220AB
Terminals: Solderrable per MIL-STD-202 method 208
Epoxy: UL 94V-0 rate flame retardant
Mounting Position: Any
Weight: 2.24 grams
Maximum Ratings and Electrical Characteristics
(Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,
resistive or inductive load. For capacitive load, derate current by 20%.)
Parameter Sy
Maximum Recurrent peak reverse
voltage
mbol
VRRM
EF
10C01
50
EF
10C02
Type
EF
10C03
EF
10C05
100 200 400 600
EF
10C06
Units
V
Maximum RMS voltage
VRMS
35
70 140 280 420
V
Maximum DC blocking voltage
Maximum instantaneous forward
voltage@ IF=5A
Maximum Average forward rectified
current @ TL=100
Peak forward surge current @8.3ms
single half sine wave superimposed
on rated load (JEDEC method)
Maximum DC reverse current
VR=VRRM,TJ=25
VR=VRRM,TJ=125
Diode junction capacitance @ f=1MHz
and applied 4V reverse voltage
Maximum reverse recovery time@
IF=0.5A, IR=1A, Irr=0.25A
Typical thermal resistance, junction to
lead
Storage temperature
Operating temperature
VDC
VF 0.95
50
I(AV) 10
IFSM 100
IR
CJ 65
trr 25
RθJC 2.2
Tstg
TJ
100 200 400 600
1.25
1.85
V
V
A
A
10
250
-55 ~ +150
-55 ~ +150
µA
pF
ns
/W
EF10CXXE3
CYStek Product Specification
http://www.Datasheet4U.com





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