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4N60Z Schematic ( PDF Datasheet ) - UNISONIC TECHNOLOGIES

Teilenummer 4N60Z
Beschreibung 40A 600V N-CHANNEL POWER MOSFET
Hersteller UNISONIC TECHNOLOGIES
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Gesamt 8 Seiten
4N60Z Datasheet, Funktion
UNISONIC TECHNOLOGIES CO., LTD
4N60Z
4A, 600V N-CHANNEL
POWER MOSFET
„ DESCRIPTION
The U TC 4N60Z is a hi gh voltage po wer MOSF ET and is
designed to have better ch aracteristics, such as fast sw itching
time, lo w gate charg e, lo w on-state res istance and h ave a high
rugged av alanche ch aracteristics. This po wer MOSF ET is usua lly
used at high speed switching applications in power supplies, PWM
motor controls , high effici ent DC to DC c onverters and bridg e
circuits.
„ FEATURES
* RDS(ON) = 2.5@VGS = 10 V
* Ultra Low Gate Charge ( typical 15 nC )
* Low Reverse Transfer Capacitance ( CRSS = typical 8.0 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness
„ SYMBOL
1
Power MOSFET
TO-220F
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N60ZL-TF3-T
4N60ZG-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-777.b
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4N60Z Datasheet, Funktion
4N60Z
„ TYPICAL CHARACTERISTICS
Power MOSFET
On-State Characteristics
10
1
VGS
Top: 10V
9V
8V
7V
6V
5.5V
5 V Bottorm:5.0V
5.0V
0.1
Notes:
1. 250µs Pulse Test
2. TC=25°С
0.1 1
10
Drain-to-Source Voltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Transfer Characteristics
10
25°С
1 150°С
0.1
2
Notes:
1. VDS=50V
2. 250µs Pulse Test
4 6 8 10
Gate-Source Voltage, VGS (V)
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QW-R502-777.B

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