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PDF BSS84N3 Data sheet ( Hoja de datos )
| Número de pieza | BSS84N3 | |
| Descripción | 50V P-CHANNEL Enhancement Mode MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSS84N3 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C465N3
Issued Date : 2009.03.03
Revised Date : 2012.05.18
Page No. : 1/ 8
50V P-CHANNEL Enhancement Mode MOSFET
BSS84N3
BVDSS
ID
-50V
-130mA
RDSON@VGS=-5V, ID=-100mA 6Ω(typ)
Features
• Low gate charge
• Excellent thermal and electrical capabilities
• Pb-free package
Equivalent Circuit
BSS84N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
GS
Absolute Maximum Ratings (Tj=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=-5V
Pulsed Drain Current (Note 1)
Maximum Power Dissipation @ TA=25℃
Thermal Resistance, Junction-to-Ambient
Maximum Lead Temperature for Soldering Purpose, 10 s
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
Rth,ja
TL
Tj, Tstg
Note : 1. Pulse width≤ 10μs, duty cycle≤2%.
Limits
-50
±20
-130
-520
225
556
260
-55~+150
Unit
V
V
mA
mA
mW
°C/W
°C
°C
BSS84N3
CYStek Product Specification
http://www.Datasheet4U.com
1 page  
CYStech Electronics Corp.
Spec. No. : C465N3
Issued Date : 2009.03.03
Revised Date : 2012.05.18
Page No. : 5/ 8
Typical Characteristics(Cont.)
Typical Transfer Characteristics
600
-VDS=10V
500
Power Derating Curve
0.25
0.2
400
0.15
300
0.1
200
0.05
100
0
0123456
-VGS, Gate-Source Voltage(V)
0
0 20 40 60 80 100 120 140 160
TA, Ambient Temperature(℃)
1
D=0.5
Transient Thermal Response Curves
0.2
0.1 0.1
0.05
0.02
0.01
0.01
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
4.RθJA=556°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
BSS84N3
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BSS84N3.PDF ] | |
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