Datenblatt-pdf.com


CY14E116N Schematic ( PDF Datasheet ) - Cypress Semiconductor

Teilenummer CY14E116N
Beschreibung 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM
Hersteller Cypress Semiconductor
Logo Cypress Semiconductor Logo 




Gesamt 30 Seiten
CY14E116N Datasheet, Funktion
PRELIMINARY
CY14B116L/CY14B116N/CY14B116S
CY14E116L/CY14E116N/CY14E116S
16-Mbit (2048 K × 8/1024 K × 16/512 K × 32)
nvSRAM
Features
16-Mbit nonvolatile static random access memory (nvSRAM)
25-ns, 30-ns and 45-ns access times
Internally organized as 2048 K × 8 (CY14X116L),
1024 K × 16 (CY14X116N), 512 K × 32 (CY14X116S)
Hands-off automatic STORE on power-down with only a
small capacitor
STORE to QuantumTrap nonvolatile elements is initiated by
software, device pin, or AutoStore on power-down
RECALL to SRAM initiated by software or power-up
High reliability
Infinite read, write, and RECALL cycles
1 million STORE cycles to QuantumTrap
Data retention: 20 years
Sleep mode operation
Low power consumption
Active current of 75 mA at 45 ns
Standby mode current of 650 A
Sleep mode current of 10 A
Operating voltages:
CY14B116X: VCC = 2.7 V to 3.6 V
CY14E116X: VCC = 4.5 V to 5.5 V
Industrial temperature: –40 C to +85 C
Packages
44-pin thin small-outline package (TSOP II)
48-pin thin small-outline package (TSOP I)
54-pin thin small-outline package (TSOP II)
165-ball fine-pitch ball grid array (FBGA) package
Restriction of hazardous substances (RoHS) compliant
Offered speeds
44-pin TSOP II: 25 ns and 45 ns
48-pin TSOP I: 30 ns and 45 ns
54-pin TSOP II: 25 ns and 45 ns
165-ball FBGA: 25 ns and 45 ns
Functional Description
The C ypress CY14X1 16L/CY14X116N/CY14X116S i s a fast
SRAM, with a no nvolatile el ement in each memory cel l. T he
memory is organized as 2048 K bytes of 8 bits each or 1024 K
words of 16 bits each o r 512 K words of 32 bit s each . T he
embedded non volatile elemen ts inco rporate Qu antumTrap
technology, prod ucing the world’s mo st reli able nonvolatile
memory. The SRAM can be read and written an infinite number
of times. The nonvolatile d ata residin g in the nonvolatile
elements do not change when data is written to the SRAM. Data
transfers from th e SRAM to the nonvolatile e lements (the
STORE operation) takes place automatically at power-down. On
power-up, data is restored to the SRAM (the RECALL operation)
from th e non volatile me mory. Both th e ST ORE an d RECALL
operations are also available under software control.
Errata: The engineering samples do not meet the address hold after end of write (tHA) and static discharge voltage specifications. For information on silicon errata, see
Errata on page 33. Details include trigger conditions, devices affected, and proposed workaround.
Cypress Semiconductor Corporation • 198 Champion Court
Document #: 001-67793 Rev. *G
• San Jose, CA 95134-1709 • 408-943-2600
Revised May 1, 2014http://www.Datasheet4U.com






CY14E116N Datasheet, Funktion
PRELIMINARY CY14B116L/CY14B116N/CY14B116S
CY14E116L/CY14E116N/CY14E116S
Pinouts (continued)
Figure 6. Pin Diagram: 165-Ball FBGA (×32)
1 2 3 4 5 6 7 8 9 10 11
A NC A6 A8 WE BA CE1 BC OE A5 A3 NC
B
NC
DQ0
DQ1
A4
BB CE2 BD
A2 NC NC DQ31
C
ZZ NC DQ4 VSS A0
A7
A1
VSS
NC
DQ27
DQ26
D
NC
DQ2
DQ5
VSS
VSS
VSS
VSS
VSS
NC
NC DQ30
E
NC
VCAP
DQ6
VCC
VSS
VSS
VSS
VCC
NC
DQ25
DQ29
F
NC
DQ3
DQ7
VCC
VCC
VSS
VCC
VCC
NC
NC DQ24
G HSB NC DQ12 VCC VCC VSS VCC VCC NC NC DQ28
H
NC
NC
VCC
VCC
VCC
VSS
VCC
VCC
VCC
NC
NC
J
NC
NC
DQ13
VCC
VCC
VSS
VCC
VCC
NC
DQ20
DQ19
K NC NC DQ8 VCC VCC VSS VCC VCC NC NC DQ18
L
NC
DQ9
DQ14
VCC
VSS
VSS
VSS
VCC
NC
NC DQ21
M
NC
NC DQ15 VSS VSS VSS VSS VSS
NC
DQ22
DQ17
N
NC
DQ10
DQ11
VSS
A11
A10
A9
VSS NC
NC DQ16
P NC NC NC A13 NC NC A18 A12 NC DQ23 NC
R NC NC A15 NC A17 NC A16 NC[7] A14 NC NC
Note
7. Address expansion for 32-Mbit. NC pin not connected to die.
Document #: 001-67793 Rev. *G
Page 6 of 38

6 Page









CY14E116N pdf, datenblatt
PRELIMINARY CY14B116L/CY14B116N/CY14B116S
CY14E116L/CY14E116N/CY14E116S
Preventing AutoStore
The Au toStore function is disab led by initia ting an AutoStore
disable sequence. A sequence of read operations is performed
in a manner similar to the Software STORE initiation. To initiate
the AutoStore disable sequence, the following sequence of CE
or OE controlled read operations must be performed:
1. Read address 0x4E38 Valid Read
2. Read address 0xB1C7 Valid Read
3. Read address 0x83E0 Valid Read
4. Read address 0x7C1F Valid Read
5. Read address 0x703F Valid Read
6. Read address 0x8B45 AutoStore Disable
AutoStore is re-en abled by in itiating an AutoS tore ena ble
sequence. A seque nce of read ope rations is performed in a
manner similar to the software RECALL initiation. To initiate the
AutoStore enable sequence, the following sequence of CE or OE
controlled read operations must be performed:
1. Read address 0x4E38 Valid Read
2. Read address 0xB1C7 Valid Read
3. Read address 0x83E0 Valid Read
4. Read address 0x7C1F Valid Read
5. Read address 0x703F Valid Read
6. Read address 0x4B46 AutoStore Enable
If th e AutoS tore function i s disab led o r re -enabled, a ma nual
software STORE operation must b e p erformed to save the
AutoStore st ate through subsequent power-down cycles . The
part comes from the factory with AutoStore en abled an d 0x00
written in all cells.
Data Protection
The CY14X116L/CY14X116N/CY14X116S pro tects dat a from
corruption d uring low volt age condi tions by inh ibiting all
externally initiated STORE and write operations. T he low
voltage condition is detected when VCC is less than VSWITCH. If
the CY14X116L/CY14X116N/CY14X116S is in a write mo de at
power-up (both CE and WE are L OW), af ter a RECALL or
STORE, the write is in hibited until the SRAM is enabled after
tLZHSB (HSB to output active). This protects against inadvertent
writes during power-up or brown out conditions.
Document #: 001-67793 Rev. *G
Page 12 of 38

12 Page





SeitenGesamt 30 Seiten
PDF Download[ CY14E116N Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
CY14E116L16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAMCypress Semiconductor
Cypress Semiconductor
CY14E116N16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAMCypress Semiconductor
Cypress Semiconductor
CY14E116S16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAMCypress Semiconductor
Cypress Semiconductor

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche