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PDF H2A1-H1050 Data sheet ( Hoja de datos )
| Número de pieza | H2A1-H1050 | |
| Descripción | IR High Power single chip LED | |
| Fabricantes | Roithner Laser | |
| Logotipo |  |
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H2A1-H1050
IR High Power single chip LED
H2A1-H1050 is a GaAlAs based, high power 1050 nm single chip LED in standard hexagonal Aluminum package for
general application. Slots i n the A luminum-core P CB allow f or easy m ounting of standard c ollimating optics an d a re
also suitable f or M3 or M4 m ounting s crews. Lar ge el ectrical i nterconnection pads on t he P CB al low f or c onvenient
installation.
Specifications
• Structure: GaAlAs
• Peak Wavelength: 1050 nm
• Optical Output Power: typ. 50 mW
• Life Time: > 10.000 hours
• Housing: standard emitter package
Absolute Maximum Ratings (Ta=25°C)
Parameter
Power Dissipation, DC
Forward Current, DC
Pulsed Current (1% duty cycle, 1kHz)
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature (max. 1,5 s)
Symbol
PD
IF
IFP
UR
Topr
Tstg
Tsol
Electro-Optical Characteristics (Ta=25°C)
Parameter
Forward Current
Viewing Angle
CW Output Power
Peak Wavelength
Forward Voltage
Half Width (FWHM)
Symbol
IF
φ
PO
λP
UF
Δλ
Condition
IF = 350 mA
IF = 350 mA
IF = 350 mA
IF = 350 mA
IF = 350 mA
Wavelength measurements tolerance is +/- 2%
Output power measurement tolerance is +/- 10%
Voltage measurement tolerance is +/- 2%
Min.
-
-
-
Device Materials
foundation
Lens
Electrodes
PCB
Item
Plastic
Acryl
AgCu
Al
Material
Value
1000
500
1000
-5
-30 … +70
-30 … +85
330
Unit
mW
mA
mA
V
°C
°C
°C
Typ.
350
± 75
50
1050
1.2
47
Max.
-
-
Unit
mA
deg.
mW
nm
V
nm
13.08.2012
H2A1-H1050
1/4
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