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Teilenummer | P10NK60Z |
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Beschreibung | STP10NK60Z | |
Hersteller | ST Microelectronics | |
Logo | ||
Gesamt 24 Seiten STB10NK60Z, STP10NK60Z,
STP10NK60ZFP, STW10NK60Z
N-channel 600 V, 0.65 Ω typ., 10 A SuperMESH™ Power MOSFET
in I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packages
Datasheet − production data
Features
TAB
Type
STB10NK60Z-1
STB10NK60ZT4
STP10NK60Z
STP10NK60ZFP
STW10NK60Z
VDSS
600 V
600 V
600 V
600 V
600 V
RDS(on)
max
ID
Pw
< 0.75 Ω 10 A 115 W
< 0.75 Ω 10 A 115 W
< 0.75 Ω 10 A 115 W
< 0.75 Ω 10 A 35 W
< 0.75 Ω 10 A 156 W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Zener-protected
Applications
■ Switching applications
I2PAK
TAB
123
TAB
3
2
1
TO-220
3
1
D2PAK
3
2
1
TO-220FP
3
2
1
TO-247
Figure 1. Internal schematic diagram
Description
These devices are N-channel Zener-protected
Power MOSFET developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well-
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Table 1. Device summary
Order codes
Marking
STB10NK60Z-1
B10NK60Z
STB10NK60ZT4
B10NK60Z
STP10NK60Z
P10NK60Z
STP10NK60ZFP
P10NK60ZFP
STW10NK60Z
W10NK60Z
Package
I²PAK
D²PAK
TO-220
TO-220FP
TO-247
Packaging
Tube
Tape and reel
Tube
Tube
Tube
November 2012
This is information on a product in full production.
Doc ID 8526 Rev 11
1/24
www.st.com
24
http://www.Datasheet4U.com
Electrical characteristics
STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
Test conditions
VDD=300 V, ID=4 A,
RG=4.7 Ω, VGS=10 V
(see Figure 19)
VDD=300 V, ID=4 A,
RG=4.7 Ω, VGS=10 V
(see Figure 19)
Min. Typ. Max. Unit
20
20
-
55
30
ns
ns
-
ns
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD=10 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=8 A, di/dt = 100 A/µs,
VDD=40 V, Tj=150 °C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
10 A
36 A
1.6 V
-
570 ns
4.3 µC
15 A
Table 9. Gate-source Zener diode
Symbol
Parameter
Test conditions
V(BR)GSO
Gate-source breakdown
voltage
Igs=± 1 mA, (ID = 0)
Min. Typ. Max. Unit
30 -
-V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components
6/24 Doc ID 8526 Rev 11
6 Page Package mechanical data
STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z
Figure 25. I²PAK (TO-262) drawing
0004982_Rev_H
12/24
Doc ID 8526 Rev 11
12 Page | ||
Seiten | Gesamt 24 Seiten | |
PDF Download | [ P10NK60Z Schematic.PDF ] |
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