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Teilenummer | 2SA1371 |
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Beschreibung | PNP Transistor | |
Hersteller | JIANGSU CHANGJIANG | |
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Gesamt 1 Seiten JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistor
2SA1371 TRANSISTOR (PNP)
FEATURES
z High Breakdown Voltage
z Small Reverse Transition Capacitance and High Frequency
TO – 92M
TO – 92MOD
1. COLLECTOR
1. EMITTER
2. BASE
2. COLLECTOR
3. EMITTER
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-300
-300
-5
-0.1
1
125
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC= -10µA,IE=0
-300
V
V(BR)CEO IC=-1mA,IB=0
-300
V
V(BR)EBO IE=-10µA,IC=0
-5
V
ICBO VCB=-200V,IE=0
-0.1 μA
IEBO VEB=-4V,IC=0
-0.1 μA
hFE VCE=-10V, IC=-10mA
40
320
VCE(sat)
IC=-20mA,IB=-2mA
-0.6 V
VBE (sat) IC=-20mA,IB=-2mA
-1 V
Cob VCB=-30V,IE=0, f=1MHz
5 pF
fT VCE=-30V,IC=-10mA
100
MHz
CLASSIFICATION OF hFE
RANK
C
RANGE
40-80
D
60-120
E
100-200
F
160-320
A,Dec,2010
Free Datasheet http://www.Datasheet4U.com
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Seiten | Gesamt 1 Seiten | |
PDF Download | [ 2SA1371 Schematic.PDF ] |
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