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PDF IN5711 Data sheet ( Hoja de datos )
| Número de pieza | IN5711 | |
| Descripción | SMALL SIGNAL SCHOTTKY DIODES | |
| Fabricantes | SAMYANG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IN5711 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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SAMYANG ELECTRONICS
SAM YANG
IN5711
SMALL SIGNAL SCHOTTKY DIODES
VOLTAGE RANGE: 60
CURRENT: 400 mW
FEATURES
For general purpos e applications
Metal s ilicon s chottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fas t s witching m ake it ideal for protection of
MOS devices ,s teering,bias ing and coupling diodes for
fas t s witching and low logic level applications
DO - 35(GLASS)
MECHANICAL DATA
Cas e:JEDEC DO--35,glas s cas e
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
Peak reverse voltage
VRRM
Pow er dissipation (Inf inite Heat Sink)
Ptot
Maximum single cycle surge 10 s square w ave
IF SM
Junction tenperature
TJ
Storage temperature range
TSTG
1)V alid provided that leads at a distance of 4mm f rom case are kept at ambient temperature
Value
70.0
4001)
2.0
125
c-55 ---+ 150
UNITS
V
zm W
A
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherw ise specified)
Symbols
Reverse breakdow n voltage
@ IR=10 A
Leakage current
@ VR=50V
Forw ard voltage drop @ IF=1mA
IF=15mA
Junction capacitance @ V R=0V ,f=1MHz
Reverse recovery time @ IF=IR=5mA ,recover to 0.1 IR
Termal resistance junction to ambient air
VR
IR
VF
VF
CJ
trr
R JA
Min.
70.0
Typ.
Max.
UNITS
2 0 0 .0
0.41
1.0
2
1
0.3
V
anA
V
V
pF
ns
/m W
www.diode.co.kr
1.
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| Número de pieza | Descripción | Fabricantes |
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