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Teilenummer | G4PH40KD |
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Beschreibung | IRG4PH40KD | |
Hersteller | IRF | |
Logo | ||
Gesamt 10 Seiten PD- 91577B
IRG4PH40KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• High short circuit rating optimized for motor control,
tsc =10µs, VCC = 720V , TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
G
• Tighter parameter distribution and higher efficiency
than previous generations
• IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
E
n-channel
Benefits
• Latest generation 4 IGBT's offer highest power density
motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
• This part replaces the IRGPH40KD2 and IRGPH40MD2
products
• For hints see design tip 97003
Absolute Maximum Ratings
Short Circuit Rated
UltraFast IGBT
VCES = 1200V
VCE(on) typ. = 2.74V
@VGE = 15V, IC = 15A
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
1200
30
15
60
60
8.0
130
10
± 20
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.77
1.7
–––
40
–––
Units
°C/W
g (oz)
1
2/7/2000
Free Datasheet http://www.Datasheet4U.com
IRG4PH40KD
14 RG = 1O0hΩm
T J = 150° C
12 VCC = 488000VV
VGE = 15V
10
100 VGE = 20V
T J = 125 oC
8
10
6
4
2
0
0 5 10 15 20 25
I C, Collector-to-emitter Current (A)
SAFE OPERATING AREA
1
30 1 10 100 1000
VCE , Collector-to-Emitter Voltage (V)
10000
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
10
TJ = 15 0°C
TJ = 12 5°C
TJ = 2 5°C
1
0 2 4 6 8 10
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6 www.irf.com
Free Datasheet http://www.Datasheet4U.com
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ G4PH40KD Schematic.PDF ] |
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