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G4PH40KD Schematic ( PDF Datasheet ) - IRF

Teilenummer G4PH40KD
Beschreibung IRG4PH40KD
Hersteller IRF
Logo IRF Logo 




Gesamt 10 Seiten
G4PH40KD Datasheet, Funktion
PD- 91577B
IRG4PH40KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
High short circuit rating optimized for motor control,
tsc =10µs, VCC = 720V , TJ = 125°C,
VGE = 15V
Combines low conduction losses with high
switching speed
G
Tighter parameter distribution and higher efficiency
than previous generations
IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
E
n-channel
Benefits
Latest generation 4 IGBT's offer highest power density
motor controls possible
HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
This part replaces the IRGPH40KD2 and IRGPH40MD2
products
For hints see design tip 97003
Absolute Maximum Ratings
Short Circuit Rated
UltraFast IGBT
VCES = 1200V
VCE(on) typ. = 2.74V
@VGE = 15V, IC = 15A
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
1200
30
15
60
60
8.0
130
10
± 20
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.77
1.7
–––
40
–––
Units
°C/W
g (oz)
1
2/7/2000
Free Datasheet http://www.Datasheet4U.com






G4PH40KD Datasheet, Funktion
IRG4PH40KD
14 RG = 1O0hm
T J = 150° C
12 VCC = 488000VV
VGE = 15V
10
100 VGE = 20V
T J = 125 oC
8
10
6
4
2
0
0 5 10 15 20 25
I C, Collector-to-emitter Current (A)
SAFE OPERATING AREA
1
30 1 10 100 1000
VCE , Collector-to-Emitter Voltage (V)
10000
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
10
TJ = 15 0°C
TJ = 12 5°C
TJ = 2 5°C
1
0 2 4 6 8 10
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6 www.irf.com
Free Datasheet http://www.Datasheet4U.com

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