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PDF K3458 Data sheet ( Hoja de datos )
| Número de pieza | K3458 | |
| Descripción | MOSFET ( Transistor ) - 2SK3458 | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3458
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3458 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply.
FEATURES
• Low gate charge
QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
• Gate voltage rating ±30 V
• Low on-state resistance
RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 3.0 A)
• Avalanche capability ratings
• Surface mount package available
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3458
TO-220AB
2SK3458-S
TO-262
2SK3458-ZK
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TA = 25°C)
PT1
Total Power Dissipation (TC = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
800
±30
±6.0
±24
1.5
100
150
–55 to +150
6.0
66.5
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 ¡ 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14755EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan
©
2000
http://www.Datasheet4U.com
1 page  
2SK3458
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5.0
4.5
4.0
3.5
3.0 ID = 6.0 A
2.5 3.0 A
2.0
1.5
1.0
0.5
0.0
-50 0 50 100 150
Tch - Channel Temperature - °C
10000
1000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
C iss
100
C oss
10
VGS = 0 V
f = 1 MHz
1
0.1 1
C rss
10 100
VDS - Drain to Source Voltage - V
1000
1000
SWITCHING CHARACTERISTICS
100
td(off)
td(on)
10
tf
tr
1
0.1
1 10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
700 14
ID = 6.0 A
600 VDD = 450 V
12
300 V
500 150 V
10
400 8
300
VGS
6
200 4
100
0
0
VDS
5 10 15 20
QG - Gate Charge - nC
2
0
25
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
REVERSE RECOVERY TIME vs. DRAIN CURRENT
10000
10
1 VGS = 10 V
0.1
0V
1000
100
0.01
0
0.5 1
VSD - Source to Drain Voltage - V
1.5
10
0.1
Data Sheet D14755EJ1V0DS
di/dt = 50 A/ µs
VGS = 0 V
1 10
IF - Drain Current - A
100
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K3458.PDF ] | |
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