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PDF SMK630F Data sheet ( Hoja de datos )
| Número de pieza | SMK630F | |
| Descripción | Advanced N-Ch Power MOSFET | |
| Fabricantes | Kodenshi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SMK630F (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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DC-DC CONVERTER APPLICATION
HIGH VOLTAGE SWITCHING APPLICATIONS
SMK630F
Advanced N-Ch Power MOSFET
Features
PIN Connection
• High Voltage : BVDSS=200V(Min.)
• Low Crss : Crss=24pF(Typ.)
• Low gate charge : Qg=12nC(Typ.)
• Low RDS(on) : RDS(on)=0.4Ω(Max.)
D
Ordering Information
G
Type No.
Marking
Package Code
GDS
S
SMK630F
SMK630
TO-220F-3L
TO-220F-3L
上海元佐电子Marking Diagram
021-54953990AAUUKK
SGΔMYYKMM6D3DD0D
SDB20D45
Column 1 : Manufacturer
Column 2 : Production Information
e.g.) GYMDD
-. G : Factory management code
-. YMDD : Date Code (year, month, date)
Column 3 : Device Code
021-54950919Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
www.yozo.hkDrain-source voltage
VDSS
Gate-source voltage
Drain current (DC) *
VGSS
(Tc=25℃)
ID (Tc=100℃)
Rating
200
±30
9
5.4
Unit
V
V
A
A
Drain current (Pulsed) *
IDM 36 A
Power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
②
②
①
①
PD
IAS
EAS
IAR
EAR
30 W
9A
232 mJ
9A
9.5 mJ
Junction temperature
Storage temperature range
TJ
150
°C
Tstg -55~150
* Limited by maximum junction temperature
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
Rth(J-C)
Rth(J-A)
Typ.
-
-
Max.
4.16
62.5
Unit
°C/W
KSD-T0O043-001
1
http://www.Datasheet4U.com
1 page  
Fig. 11 Gate Charge Test Circuit & Waveform
SMK630F
上00w22海1w1--w元.55佐y44o99电z55o30子.99h91k09Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
KSD-T0O043-001
5
http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SMK630F.PDF ] | |
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