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PDF BTC12-600 Data sheet ( Hoja de datos )
| Número de pieza | BTC12-600 | |
| Descripción | SILICON BIDIRECTIONAL THYRISTORS | |
| Fabricantes | Digitron | |
| Logotipo |  |
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DIGITRON SEMICONDUCTORS
BTC12 SERIES
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
(TJ = 125°C)
BTC12-200
BTC12-400
BTC12-600
VDRM
200 Volts
400
600
RMS on-state current (TC = 70°C)
IT(RMS)
12 Amps
Peak non-repetitive surge current
(1 cycle, 50 Hz, t = 20ms)
(1/2 cycle, 50Hz, t = 10ms)
ITSM
90 Amps
100
Circuit fusing considerations (TJ = -40 to 125°C , t = 10ms)
I2t 40 A2s
Peak gate power (pulse width = 2.0µs)
PGM 16 Watts
Average gate power (t = 10ms)
Peak gate current (pulse width = 1.0µs)
PG(AV)
IGM
0.35
4.0
Watts
Amps
Operating junction temperature range
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
Maximum rate of change of on-state current
(ITM = 12A, IG = 200mA)
di/dt
A/µs
10
Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
RӨJC
Maximum
2.2
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Peak blocking current (either direction)
(Rated VDRM @ TJ = 125°C, gate open)
Peak on-state voltage (either direction)
(ITM = 17A peak)
Peak gate trigger voltage
(main terminal voltage = 12V, RL = 100Ω)
All quadrants
(main terminal voltage = rated VDRM, RL = 1kΩ, TJ = 125°C)
All quadrants
Holding current (either direction)
(main terminal voltage= 12V, gate open, initiating current = 1.0A, TC = 25°C)
Latching current
(main terminal voltage = 24V, gate trigger source = 15V, 100Ω)
MT2(+), G(+)
MT2(-), G(-)
MT2(+), G(-)
Critical rate of rise of off state voltage
(Rated VDRM, exponential voltage rise, gate open, TJ = 125°C)
Blocking voltage application rate
(@ TC = 80°C @ VDRM, IT = 6A, gate open, commutation di/dt = 4.3A/ms)
Symbol Min
IDRM
-
VTM -
Typ.
-
1.4
Max
2.0
1.65
Unit
mA
Volts
VGTM - - 2.5 Volts
0.2 -
-
IH
mA
- - 50
IL - - 100 mA
- - 100
- - 200
dv/dt
100
-
V/µs
-
dv/dt(c)
V/µs
5- -
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
www.digitroncorp.com
Rev. 20130204
http://www.Datasheet4U.com
1 page | ||
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| PDF Descargar | [ Datasheet BTC12-600.PDF ] | |
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