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Teilenummer | 2SD371 |
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Beschreibung | Silicon NPN Power Transistors | |
Hersteller | INCHANGE | |
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Gesamt 2 Seiten INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SD371
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·High Power Dissipation-
: PC= 50W(Max)@TC=25℃
·Complement to Type 2SB531
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
90 V
80 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
IE Emitter Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
Tstg Storage Temperature
6A
-6 A
50 W
150 ℃
-65~150 ℃
isc website:www.iscsemi.cn
1
http://www.Datasheet4U.com
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ 2SD371 Schematic.PDF ] |
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