|
|
PDF PHW11N50E Data sheet ( Hoja de datos )
| Número de pieza | PHW11N50E | |
| Descripción | PowerMOS transistors | |
| Fabricantes | Philips | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PHW11N50E (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHB11N50E, PHW11N50E
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
SYMBOL
g
d
s
QUICK REFERENCE DATA
VDSS = 500 V
ID = 10.9 A
RDS(ON) ≤ 0.55 Ω
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies,
T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching
applications.
The PHW11N50E is supplied in the SOT429 (TO247) conventional leaded package.
The PHB11N50E is supplied in the SOT404 surface mounting package.
PINNING
SOT404
SOT429 (TO247)
PIN DESCRIPTION
tab
1 gate
2 drain1
3 source
tab drain
2
13
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
± 30
10.9
6.9
44
156
150
UNIT
V
V
V
A
A
A
W
˚C
1 It is not possible to make connection to pin 2 of the SOT404 package.
December 1998
1
Rev 1.000
http://www.Datasheet4U.com
1 page  
Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Drain current, ID (A)
20
18 VDS > ID X RDS(ON)
PHP11N50E
16
14
12
10
8 150 C
6
Tj = 25 C
4
2
0
01234567
Gate-source voltage, VGS (V)
Fig.7. Typical transfer characteristics.
ID = f(VGS); parameter Tj
Transconductance, gfs (S)
12
VDS > ID X RDS(ON)
10
8
PHP11N50E
Tj = 25 C
150 C
6
4
2
0
0 5 10 15
Drain current, ID (A)
Fig.8. Typical transconductance.
gfs = f(ID); parameter Tj
20
a
2
Normalised RDS(ON) = f(Tj)
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 5.5 A; VGS = 10 V
Product specification
PHB11N50E, PHW11N50E
VGS(TO) / V
4
3
2
max.
typ.
min.
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS
1E-01 ID / A
SUB-THRESHOLD CONDUCTION
1E-02
1E-03
2 % typ 98 %
1E-04
1E-05
1E-06
01234
VGS / V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Capacitances, Ciss, Coss, Crss (pF)
10000
1000
100
PHP11N50E
Ciss
Coss
Crss
10
0.1
1 10
Drain-source voltage, VDS (V)
100
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
December 1998
5
Rev 1.000
http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet PHW11N50E.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PHW11N50E | PowerMOS transistors Avalanche energy rated |  NXP Semiconductors |
| PHW11N50E | PowerMOS transistors Avalanche energy rated | NXP Semiconductors |
| PHW11N50E | PowerMOS transistors | Philips |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |