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PDF FTC2412K Data sheet ( Hoja de datos )
| Número de pieza | FTC2412K | |
| Descripción | General Purpose Transistors | |
| Fabricantes | First Silicon | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
General Purpose Transistors
NPN Silicon
• We declare that the material of product compliance with RoHS requirements.
ORDERING INFORMATION
Device
FTC2412K-Q
FTC2412K-R
FTC2412K-S
Marking
BQ
BR
G1F
Shipping
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
IC
PC
Tj
Tstg
Value
50
60
7.0
150
0.2
150
-55 ~ +150
Unit
V
V
V
mAdc
W
C
C
FTC2412K
3
2
1
SOT– 23
1
BASE
3
COLLECTOR
2
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(IC = 1 mA)
Emitter–Base Breakdown Voltage
(IE = 50 µA)
Collector–Base Breakdown Voltage
(IC = 50 µA)
Collector Cutoff Current
(VCB = 60 V)
Emitter cutoff current
(VEB = 7 V)
Collector-emitter saturation voltage
(IC/ IB = 50 mA / 5m A)
DC current transfer ratio h FE
(VCE = 6 V, IC = 1mA)
Transition frequency
(VCE = 12 V, IE = – 2mA, f =30MHz )
Output capacitance
(VCB = 12 V, IE = 0A, f =1MHz )
Symbol
V(BR)CEO
V(BR)EBO
V(BR)CBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min
50
7
60
-
-
-
120
-
-
Typ
-
-
-
-
-
-
-
180
2.0
hFE values are classified as follows:
*Q
hEF 120~270
R
180~390
S
270~560
2010. 01. 18
Revision No : 1
Max Unit
-V
-V
-V
0.1 μA
0.1 μA
0.4 V
560 -
- MHz
3.5 pF
1/3
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