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SW7N65B Schematic ( PDF Datasheet ) - SEMIPOWER

Teilenummer SW7N65B
Beschreibung N-channel TO-220F MOSFET
Hersteller SEMIPOWER
Logo SEMIPOWER Logo 




Gesamt 5 Seiten
SW7N65B Datasheet, Funktion
SAMWIN
SW7N65B
N-channel TO-220F MOSFET
Features
TO-220F
High ruggedness
RDS(ON) (Max 1.4 )@VGS=10V
Gate Charge (Typical 19nC)
Improved dv/dt Capability
100% Avalanche Tested
1
23
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
BVDSS : 650V
ID : 7.0A
RDS(ON) : 1.4 ohm
2
1
3
Order Codes
Item
1
Sales Type
SW F 7N65B
Marking
SW7N65
Package
TO-220F
Packaging
TUBE
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 1)
(note 2)
(note 1)
(note 3)
TSTG, TJ
TL
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
650
7.0*
4.4*
28
±30
535.1
70.6
5
65.17
0.52
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Value
1.92
-
47.77
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
1/5
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