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Teilenummer | IRF6643TRPbF |
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Beschreibung | DIGITAL AUDIO MOSFET | |
Hersteller | IRF | |
Logo | ||
Gesamt 9 Seiten DIGITAL AUDIO MOSFET
IRF6643TRPbF
Features
• Latest MOSFET silicon technology
• Key parameters optimized for Class-D audio amplifier
applications
• Low RDS(on) for improved efficiency
• Low Qg for better THD and improved efficiency
• Low Qrr for better THD and lower EMI
• Low package stray inductance for reduced ringing and lower
EMI
• Can deliver up to 200 W per channel into 8Ω load in half-bridge
configuration amplifier
• Dual sided cooling compatible
• Compatible with existing surface mount technologies
• RoHS compliant, halogen-free
• Lead-free (qualified up to 260°C reflow)
Applicable DirectFET Outline and Substrate Outline (see p.6, 7 for details)
Key Parameters
VDS
RDS(ON) typ. @ VGS = 10V
Qg typ.
150
29
39
RG(int) typ.
0.9
V
mΩ
nC
Ω
MZ DirectFET® ISOMETRIC
SH SJ ST SH MQ MX MT MN MZ
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and
internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
The IRF6643PbF device utilizes DirectFET® packaging technology. DirectFET® packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET® package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFET® package
also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation.
These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Base part number
IRF6643TRPbF
Package Type
DirectFET Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRF6643TRPbF
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TC = 25°C
Power Dissipation
PD @TA = 25°C
PD @TA = 70°C
EAS
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
IAR Avalanche Current
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes through are on page 9
1 www.irf.com © 2013 International Rectifier
Max.
±20
35
6.2
5.0
76
89
2.8
1.8
50
7.6
0.022
-40 to + 150
Units
V
A
W
mJ
A
W/°C
°C
May 31, 2013
http://www.Datasheet4U.com
VDD
Fig 17a. Gate Charge Test Circuit
IRF6643TRPbF
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 17b. Gate Charge Waveform
Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
6 www.irf.com © 2013 International Rectifier
May 31, 2013
http://www.Datasheet4U.com
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ IRF6643TRPbF Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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