Datenblatt-pdf.com


IRF6643TRPbF Schematic ( PDF Datasheet ) - IRF

Teilenummer IRF6643TRPbF
Beschreibung DIGITAL AUDIO MOSFET
Hersteller IRF
Logo IRF Logo 




Gesamt 9 Seiten
IRF6643TRPbF Datasheet, Funktion
DIGITAL AUDIO MOSFET
IRF6643TRPbF
Features
Latest MOSFET silicon technology
Key parameters optimized for Class-D audio amplifier
applications
Low RDS(on) for improved efficiency
Low Qg for better THD and improved efficiency
Low Qrr for better THD and lower EMI
Low package stray inductance for reduced ringing and lower
EMI
Can deliver up to 200 W per channel into 8Ω load in half-bridge
configuration amplifier
Dual sided cooling compatible
Compatible with existing surface mount technologies
RoHS compliant, halogen-free
Lead-free (qualified up to 260°C reflow)
Applicable DirectFET Outline and Substrate Outline (see p.6, 7 for details)
Key Parameters
VDS
RDS(ON) typ. @ VGS = 10V
Qg typ.
150
29
39
RG(int) typ.
0.9
V
mΩ
nC
Ω
MZ DirectFET® ISOMETRIC
SH SJ ST SH MQ MX MT MN MZ
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and
internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
The IRF6643PbF device utilizes DirectFET® packaging technology. DirectFET® packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET® package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFET® package
also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation.
These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Base part number
IRF6643TRPbF
Package Type
DirectFET Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRF6643TRPbF
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
PD @TC = 25°C
Power Dissipation
PD @TA = 25°C
PD @TA = 70°C
EAS
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
IAR Avalanche Current
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes through are on page 9
1 www.irf.com © 2013 International Rectifier
Max.
±20
35
6.2
5.0
76
89
2.8
1.8
50
7.6
0.022
-40 to + 150
Units
V
A
W
mJ
A
W/°C
°C
May 31, 2013
http://www.Datasheet4U.com






IRF6643TRPbF Datasheet, Funktion
VDD
Fig 17a. Gate Charge Test Circuit
IRF6643TRPbF
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 17b. Gate Charge Waveform
Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
6 www.irf.com © 2013 International Rectifier
May 31, 2013
http://www.Datasheet4U.com

6 Page







SeitenGesamt 9 Seiten
PDF Download[ IRF6643TRPbF Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
IRF6643TRPbFDIGITAL AUDIO MOSFETIRF
IRF

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche