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Teilenummer | RQ3G100GN |
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Beschreibung | N-Channel 40V 10A Power MOSFET | |
Hersteller | ROHM Semiconductor | |
Logo | ||
Gesamt 12 Seiten Free Datasheet http://www.Datasheet4U.com
RQ3G100GN
Nch 40V 10A Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
40V
14.3mΩ
±10A
2W
lFeatures
1) Low on - resistance.
2) High Power Package (HSMT8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline
HSMT8
lInner circuit
Datasheet
lApplication
Switching
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Range of storage temperature
lPackaging specifications
Packing
Reel size (mm)
Type Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Embossed
Tape
330
12
3000
TB
G100GN
Symbol
VDSS
ID
ID,pulse*1
VGSS
EAS*2
IAS*2
PD*3
Tj
Tstg
Value
40
±10
±40
±20
15.6
10
2
150
-55 to +150
Unit
V
A
A
V
mJ
A
W
℃
℃
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
20140328 - Rev.002
Free Datasheet http://www.Datasheet4U.com
RQ3G100GN
lElectrical characteristic curves
Fig.8 Typical Transfer Characteristics
Datasheet
Fig.9 Gate Threshold Voltage vs. Junction
Temperature
Fig.10 Transconductance vs. Drain Current
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
6/11
20140328 - Rev.002
6 Page Free Datasheet http://www.Datasheet4U.com
12 Page | ||
Seiten | Gesamt 12 Seiten | |
PDF Download | [ RQ3G100GN Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
RQ3G100GN | N-Channel 40V 10A Power MOSFET | ROHM Semiconductor |
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