PDF AO4614B Data sheet ( Hoja de datos )

Número de pieza	AO4614B
Descripción	40V Dual P + N-Channel MOSFET
Fabricantes	Alpha & Omega Semiconductor
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No Preview Available ! AO4614B 40V Dual P + N-Channel MOSFET General Description The AO4614B uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Product Summary N-Channel P-Channel VDS (V) = 40V, ID = 6A (VGS=10V) RDS(ON) -40V -5A (VGS=-10V) < 30mΩ (VGS=10V) < 45mΩ (VGS= -10V) < 38mΩ (VGS=4.5V) < 63mΩ (VGS= -4.5V) 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View D2 Pin1 Top View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 G2 S2 n-channel G1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B Avalanche Current B Repetitive avalanche energy L=0.1mH B ID IDM IAR EAR Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Max n-channel 40 ±20 6 5 30 14 9.8 2 1.28 -55 to 150 Max p-channel -40 ±20 -5 -4 -30 -20 20 2 1.28 -55 to 150 D1 S1 p-channel Units V V A mJ W °C Thermal Characteristics: n-channel and p-channel Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 48 74 35 48 74 35 Max 62.5 110 50 62.5 110 50 Units °C/W °C/W °C/W °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com Free Datasheet http://www.Datasheet4U.com 1 page AO4614B P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID= -250µA, VGS=0V VDS= -40V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS= ±20V VDS=VGS ID= -250µA VGS= -10V, VDS= -5V VGS= -10V, ID= -5A Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VGS= -4.5V, ID= -4A VDS= -5V, ID= -5A IS= -1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C -40 -1.7 -30 -1 -5 ±100 -2 -3 36 52 50 13 -0.76 45 65 63 -1 -2 V µA nA V A mΩ S V A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS= -20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 750 940 1175 pF 97 pF 72 pF 14 Ω SWITCHING PARAMETERS Qg (-10V) Total Gate Charge Qg (-4.5V) Total Gate Charge VGS= -10V, VDS= -20V, Qgs Gate Source Charge ID= -5A Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS= -10V, VDS= -20V, RL=4Ω, tD(off) Turn-Off DelayTime RGEN=3Ω tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF= -5A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF= -5A, dI/dt=100A/µs 17 7.9 3.4 3.2 6.2 8.4 44.8 41.2 21 14 22 10 27 nC nC nC nC ns ns ns ns ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with AT: TAh=e25v°aClu. eThoef RvaθlJuAeisinmaenaysugrievdenwaithppthliceadtieovnicdeepmeonudnsteodnotnhe1iuns2eFr'Rs -s4pebcoiafircdbwoiathrd2doez.siCgonp. pTehre, icnuarresntitll raaitrinegnvisirobnamseednot nwitthheT A =25°C. Tthe≤va1lu0es itnhearnmyaal greivseisntaanpcpelicraattiinogn. depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal rBes: iRsteapnecteitirvaetinragt.ing, pulse width limited by junction temperature. 9 BC:.RTehpeeRtitiθvJeA irsattihneg,spuumlsoef wthideththleimrmitaeldimbypejudnecnticoenftreommpjeurnacttuioren. to lead R θJL and lead to ambient. 12 CD..TThheeRstθaJAticiscthhaerascutmeriosftitchseinthFeirgmuarel sim1pteod6e,n1c2e,1fr4oamrejuonbcttaioinnetdo ulesaindgR<θ3J0L 0anµds lpeualdsetos,admutbyiecnytc.le 0.5% max. DE..TThheessetatteicsctshaarraecpteerrifsotrimcseidn wFiitghutrhees d1etvoic6e,1m2,o1u4natered oobnta1inined2 FuRsi-n4gb8o0aµrds wpiuthlse2so,z.dCutoypcpyecrl,ein0.a5%stimll aaixr.environment with ET. AT=h2e5s°Ce .teTshtes aSrOeApecruforvremperdowviidthesthaesdinegvilceepmuloseunrtaetdingon. 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SROeAv1cu:rJvaenp2ro0v1id0es a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com Free Datasheet http://www.Datasheet4U.com 5 Page

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